Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates: Nanopore density control

Hafizal Yahaya, Yoshifumi Ikoma, Keiji Kuriyama, Teruaki Motooka

    研究成果: Chapter in Book/Report/Conference proceedingConference contribution

    1 被引用数 (Scopus)

    抄録

    We have investigated the nanopore formation utilizing SiC/Si (001) heteroepitaxial growth. Inverse pyramidal pits were produced by {111} faceted on the top of Si layer of Silicon on Insulator (001) substrate after SiC growth by using CH3SiH3 pulse jet chemical vapor deposition. Randomly distributed nanopores with the size of ∼10 nm were obtained after dipped into BHF solution for etching the buried oxide layer through the top of the pit. It was found that the densities of the pits and the nanopores strongly depend on the initial SiC nucleation density which can be controlled by the pulse frequency and number of CH3SiH3 pulse jets.

    本文言語英語
    ホスト出版物のタイトルSeventh International Conference on Thin Film Physics and Applications
    DOI
    出版ステータス出版済み - 3 30 2011
    イベント7th International Conference on Thin Film Physics and Applications - Shanghai, 中国
    継続期間: 9 24 20109 27 2010

    出版物シリーズ

    名前Proceedings of SPIE - The International Society for Optical Engineering
    7995
    ISSN(印刷版)0277-786X

    その他

    その他7th International Conference on Thin Film Physics and Applications
    国/地域中国
    CityShanghai
    Period9/24/109/27/10

    All Science Journal Classification (ASJC) codes

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • コンピュータ サイエンスの応用
    • 応用数学
    • 電子工学および電気工学

    フィンガープリント

    「Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates: Nanopore density control」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル