Fabrication of p-i-n solar cells utilizing ZnlnON by RF magnetron sputtering

Koichi Matsushima, Ryota Shimizu, Tomoaki Ide, Daisuke Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

研究成果: Contribution to journalConference article

1 引用 (Scopus)

抜粋

We succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnlnON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (Voc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm2. The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnlnON film has rather large tilt and twist angles and a high dislocation density of 7.62×1010 cm-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnlnON films as an intrinsic layer of wide band gap p-i-n solar cells with a high Voc.

元の言語英語
ページ(範囲)53-57
ページ数5
ジャーナルMaterials Research Society Symposium Proceedings
1741
発行部数January
DOI
出版物ステータス出版済み - 1 1 2015
イベント2014 MRS Fall Meeting - Boston, 米国
継続期間: 11 30 201412 5 2014

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント Fabrication of p-i-n solar cells utilizing ZnlnON by RF magnetron sputtering' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用