抄録
We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AIGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5xl010 cm2 down to 2xl09 cm2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Alo.ssGao.eaN capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5 %.
| 元の言語 | 英語 |
|---|---|
| ジャーナル | Materials Research Society Symposium - Proceedings |
| 巻 | 537 |
| 出版物ステータス | 出版済み - 12 1 1999 |
| 外部発表 | Yes |
Fingerprint
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
これを引用
Fabrication of self-assembling AIGaN quantum dot on AIGaN surfaces using anti-surfactant. / Hirayama, H.; Aoyagi, Y.; Satoru, Tanaka.
：: Materials Research Society Symposium - Proceedings, 巻 537, 01.12.1999.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Fabrication of self-assembling AIGaN quantum dot on AIGaN surfaces using anti-surfactant
AU - Hirayama, H.
AU - Aoyagi, Y.
AU - Satoru, Tanaka
PY - 1999/12/1
Y1 - 1999/12/1
N2 - We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AIGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5xl010 cm2 down to 2xl09 cm2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Alo.ssGao.eaN capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5 %.
AB - We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AIGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5xl010 cm2 down to 2xl09 cm2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Alo.ssGao.eaN capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5 %.
UR - http://www.scopus.com/inward/record.url?scp=0033354001&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033354001&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0033354001
VL - 537
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -