Fabrication of self-assembling AIGaN quantum dot on AIGaN surfaces using anti-surfactant

We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AIGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5xl010 cm2 down to 2xl09 cm2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Alo.ssGao.eaN capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5 %.