Fabrication of self-assembling AlGaN quantum dot on AlGaN surfaces using anti-surfactant

H. Hirayama, Y. Aoyagi, S. Tanaka

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AlGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5×1010 cm-2 down to 2×109 cm -2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Al0.38Ga 0.62N capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5%.

元の言語英語
ジャーナルMRS Internet Journal of Nitride Semiconductor Research
4
発行部数SUPPL. 1
出版物ステータス出版済み - 12 1 1999
外部発表Yes

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Surface-Active Agents
Semiconductor quantum dots
Surface active agents
Fabrication
Organic chemicals
Laser modes
Interfacial energy
Organic Chemicals
Chemical vapor deposition
Photoluminescence
aluminum gallium nitride
Metals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

これを引用

Fabrication of self-assembling AlGaN quantum dot on AlGaN surfaces using anti-surfactant. / Hirayama, H.; Aoyagi, Y.; Tanaka, S.

:: MRS Internet Journal of Nitride Semiconductor Research, 巻 4, 番号 SUPPL. 1, 01.12.1999.

研究成果: ジャーナルへの寄稿記事

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abstract = "We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AlGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5×1010 cm-2 down to 2×109 cm -2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Al0.38Ga 0.62N capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5{\%}.",
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AU - Aoyagi, Y.

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N2 - We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AlGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5×1010 cm-2 down to 2×109 cm -2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Al0.38Ga 0.62N capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5%.

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