We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AlGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5×1010 cm-2 down to 2×109 cm -2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Al0.38Ga 0.62N capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5%.
|ジャーナル||MRS Internet Journal of Nitride Semiconductor Research|
|出版ステータス||出版済み - 1999|
!!!All Science Journal Classification (ASJC) codes