We demonstrate InGaN and AlGaN quantum dots (QDs) formation on AlGaN surfaces vir metal organic chemical vapor deposition (MOCVD). Si anti-surfactant was used in order to modify surface energy balance for changing growth mode from 2-dimensional step-flow growth to 3-dimensional nano-scale island formation. The average lateral size and thickness of the InGaN and AlGaN QDs are 10-20 nm and 5 nm, respectively. Intense photoluminescence (PL) was observed from InGaN QDs even in room temperature. In and Al incorporation in InGaN and AlGaN QDs were estimated to be 22-52% and 1-5%, respectively, from the PL spectrum.
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