Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant

Hideki Hirayama, Tanaka Satoru, Yoshinobu Aoyagi

研究成果: ジャーナルへの寄稿コメント/討論

6 引用 (Scopus)

抄録

We demonstrate InGaN and AlGaN quantum dots (QDs) formation on AlGaN surfaces vir metal organic chemical vapor deposition (MOCVD). Si anti-surfactant was used in order to modify surface energy balance for changing growth mode from 2-dimensional step-flow growth to 3-dimensional nano-scale island formation. The average lateral size and thickness of the InGaN and AlGaN QDs are 10-20 nm and 5 nm, respectively. Intense photoluminescence (PL) was observed from InGaN QDs even in room temperature. In and Al incorporation in InGaN and AlGaN QDs were estimated to be 22-52% and 1-5%, respectively, from the PL spectrum.

元の言語英語
ページ(範囲)287-290
ページ数4
ジャーナルMicroelectronic Engineering
49
発行部数3-4
DOI
出版物ステータス出版済み - 1 1 1999
外部発表Yes

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assembling
Surface-Active Agents
Semiconductor quantum dots
Surface active agents
surfactants
quantum dots
Fabrication
fabrication
Photoluminescence
Organic Chemicals
photoluminescence
Organic chemicals
Energy balance
Interfacial energy
surface energy
metalorganic chemical vapor deposition
Chemical vapor deposition
Metals
aluminum gallium nitride
room temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

これを引用

Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant. / Hirayama, Hideki; Satoru, Tanaka; Aoyagi, Yoshinobu.

:: Microelectronic Engineering, 巻 49, 番号 3-4, 01.01.1999, p. 287-290.

研究成果: ジャーナルへの寄稿コメント/討論

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title = "Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant",
abstract = "We demonstrate InGaN and AlGaN quantum dots (QDs) formation on AlGaN surfaces vir metal organic chemical vapor deposition (MOCVD). Si anti-surfactant was used in order to modify surface energy balance for changing growth mode from 2-dimensional step-flow growth to 3-dimensional nano-scale island formation. The average lateral size and thickness of the InGaN and AlGaN QDs are 10-20 nm and 5 nm, respectively. Intense photoluminescence (PL) was observed from InGaN QDs even in room temperature. In and Al incorporation in InGaN and AlGaN QDs were estimated to be 22-52{\%} and 1-5{\%}, respectively, from the PL spectrum.",
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T1 - Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant

AU - Hirayama, Hideki

AU - Satoru, Tanaka

AU - Aoyagi, Yoshinobu

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We demonstrate InGaN and AlGaN quantum dots (QDs) formation on AlGaN surfaces vir metal organic chemical vapor deposition (MOCVD). Si anti-surfactant was used in order to modify surface energy balance for changing growth mode from 2-dimensional step-flow growth to 3-dimensional nano-scale island formation. The average lateral size and thickness of the InGaN and AlGaN QDs are 10-20 nm and 5 nm, respectively. Intense photoluminescence (PL) was observed from InGaN QDs even in room temperature. In and Al incorporation in InGaN and AlGaN QDs were estimated to be 22-52% and 1-5%, respectively, from the PL spectrum.

AB - We demonstrate InGaN and AlGaN quantum dots (QDs) formation on AlGaN surfaces vir metal organic chemical vapor deposition (MOCVD). Si anti-surfactant was used in order to modify surface energy balance for changing growth mode from 2-dimensional step-flow growth to 3-dimensional nano-scale island formation. The average lateral size and thickness of the InGaN and AlGaN QDs are 10-20 nm and 5 nm, respectively. Intense photoluminescence (PL) was observed from InGaN QDs even in room temperature. In and Al incorporation in InGaN and AlGaN QDs were estimated to be 22-52% and 1-5%, respectively, from the PL spectrum.

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DO - 10.1016/S0167-9317(99)00448-7

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JO - Microelectronic Engineering

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