Fabrication of Si field emitters with gate using anodization

Katsuya Higa, Kiyoaki Nishii, Tanemasa Asano

研究成果: 会議への寄与タイプ学会誌査読

2 被引用数 (Scopus)

抄録

We have investigated the application of anodization process to fabrication of silicon field emitters. When anodization is carried out in the dark at low current density on single crystal silicon having n/p junctions, porous silicon is preferentially formed in p-type region, whereas n-type region is hardly affected. An emitter tip structure can be formed at the back side of unanodized n-type region, since anodization proceeds almost isotropically. The shape of emitter tip structure can be controlled by changing the dimension of the n/p junction area and varying the resistivity of p-type region. Fabrication of an emitter array and its field emission characteristic are reported. Results of fabrication of gated structures are also reported.

本文言語英語
ページ78-82
ページ数5
出版ステータス出版済み - 12月 1 1997
イベントProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea
継続期間: 8月 17 19978月 21 1997

その他

その他Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97
CityKyongju, Korea
Period8/17/978/21/97

!!!All Science Journal Classification (ASJC) codes

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