Fabrication of silicon and carbon based wide-gap semiconductor thin films for high conversion efficiency

Kohsuke Yoshinaga, Hiroshi Naragino, Akira Nakahara, Kensuke Honda

研究成果: Contribution to journalConference article査読

5 被引用数 (Scopus)

抄録

Nitrogen doped amorphous silicon carbide (N-doped a-SiC) thin films were fabricated by radio frequency plasma enhanced chemical vapor deposition (RF-PeCVD) method using mixed solution of tetramethylsilane (TES) and 1,1,1,3,3,3-hexamethyldisilazane (HMDS) as a liquid source. Chemical composition of N-doped a-SiC thin film was Si:C 1:4 and sp2-bonded carbon ratio was 0.75. N-doped DLC were multi-phase structure including a-SiC phase, sp 2 clusters and a-Si clusters. Optical gap and resistivity of the film were 1.68 eV and 4.32×104 Ω cm, respectively. From photocurrent measurement under UV exposure, it was clarified that the film functioned as n-type semiconductor materials with 4.87 % of quantum yield, which was on the same level as that obtained at anatase-type titanium oxide prepared by sol-gel method. To apply these films to solar cells, further improvements of optical gap and conductivity are necessary.

本文言語英語
論文番号012040
ジャーナルJournal of Physics: Conference Series
441
1
DOI
出版ステータス出版済み - 2013
外部発表はい
イベント11th Asia Pacific Conference on Plasma Science and Technology, APCPST 2012 and 25th Symposium on Plasma Science for Materials, SPSM 2012 - Kyoto, 日本
継続期間: 10 2 201210 5 2012

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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