Nitrogen doped amorphous silicon carbide (N-doped a-SiC) thin films were fabricated by radio frequency plasma enhanced chemical vapor deposition (RF-PeCVD) method using mixed solution of tetramethylsilane (TES) and 1,1,1,3,3,3-hexamethyldisilazane (HMDS) as a liquid source. Chemical composition of N-doped a-SiC thin film was Si:C 1:4 and sp2-bonded carbon ratio was 0.75. N-doped DLC were multi-phase structure including a-SiC phase, sp 2 clusters and a-Si clusters. Optical gap and resistivity of the film were 1.68 eV and 4.32×104 Ω cm, respectively. From photocurrent measurement under UV exposure, it was clarified that the film functioned as n-type semiconductor materials with 4.87 % of quantum yield, which was on the same level as that obtained at anatase-type titanium oxide prepared by sol-gel method. To apply these films to solar cells, further improvements of optical gap and conductivity are necessary.
|ジャーナル||Journal of Physics: Conference Series|
|出版ステータス||出版済み - 2013|
|イベント||11th Asia Pacific Conference on Plasma Science and Technology, APCPST 2012 and 25th Symposium on Plasma Science for Materials, SPSM 2012 - Kyoto, 日本|
継続期間: 10月 2 2012 → 10月 5 2012
!!!All Science Journal Classification (ASJC) codes