TY - JOUR
T1 - Fabrication of silicon and carbon based wide-gap semiconductor thin films for high conversion efficiency
AU - Yoshinaga, Kohsuke
AU - Naragino, Hiroshi
AU - Nakahara, Akira
AU - Honda, Kensuke
PY - 2013
Y1 - 2013
N2 - Nitrogen doped amorphous silicon carbide (N-doped a-SiC) thin films were fabricated by radio frequency plasma enhanced chemical vapor deposition (RF-PeCVD) method using mixed solution of tetramethylsilane (TES) and 1,1,1,3,3,3-hexamethyldisilazane (HMDS) as a liquid source. Chemical composition of N-doped a-SiC thin film was Si:C 1:4 and sp2-bonded carbon ratio was 0.75. N-doped DLC were multi-phase structure including a-SiC phase, sp 2 clusters and a-Si clusters. Optical gap and resistivity of the film were 1.68 eV and 4.32×104 Ω cm, respectively. From photocurrent measurement under UV exposure, it was clarified that the film functioned as n-type semiconductor materials with 4.87 % of quantum yield, which was on the same level as that obtained at anatase-type titanium oxide prepared by sol-gel method. To apply these films to solar cells, further improvements of optical gap and conductivity are necessary.
AB - Nitrogen doped amorphous silicon carbide (N-doped a-SiC) thin films were fabricated by radio frequency plasma enhanced chemical vapor deposition (RF-PeCVD) method using mixed solution of tetramethylsilane (TES) and 1,1,1,3,3,3-hexamethyldisilazane (HMDS) as a liquid source. Chemical composition of N-doped a-SiC thin film was Si:C 1:4 and sp2-bonded carbon ratio was 0.75. N-doped DLC were multi-phase structure including a-SiC phase, sp 2 clusters and a-Si clusters. Optical gap and resistivity of the film were 1.68 eV and 4.32×104 Ω cm, respectively. From photocurrent measurement under UV exposure, it was clarified that the film functioned as n-type semiconductor materials with 4.87 % of quantum yield, which was on the same level as that obtained at anatase-type titanium oxide prepared by sol-gel method. To apply these films to solar cells, further improvements of optical gap and conductivity are necessary.
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U2 - 10.1088/1742-6596/441/1/012040
DO - 10.1088/1742-6596/441/1/012040
M3 - Conference article
AN - SCOPUS:84881040918
VL - 441
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012040
T2 - 11th Asia Pacific Conference on Plasma Science and Technology, APCPST 2012 and 25th Symposium on Plasma Science for Materials, SPSM 2012
Y2 - 2 October 2012 through 5 October 2012
ER -