Fabrication of single-crystal Si microstructures by anodization

Katsuya Higa, Tanemasa Asano

研究成果: Chapter in Book/Report/Conference proceedingOther chapter contribution

2 被引用数 (Scopus)

抄録

We have investigated the application of the anodization process to the fabrication of microstructures consisting of single-crystal Si. When anodization is carried out in the dark, porous Si is preferentially formed in a p-type region. The porous region can be used as a sacrificial region. The unanodized Si region forms the components of the microstructures. The shape of the porous region can be controlled by varying the profiles of the n- and p-type regions and their resistivity. It has been found that, by utilizing these characteristics, various microstructures can be formed from single-crystal Si. Fabrication of a cantilever and a piezoresistive gauge for a pressure sensor are demonstrated.

本文言語英語
ホスト出版物のタイトルJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
編集者Y. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, al et al
ページ6347-6695
ページ数349
35
12 B
出版ステータス出版済み - 12 1996
外部発表はい
イベントProceedings of the 1996 9th International MicroProcess Conference, MPC'96 - Kyushu, Jpn
継続期間: 7 8 19967 11 1996

その他

その他Proceedings of the 1996 9th International MicroProcess Conference, MPC'96
CityKyushu, Jpn
Period7/8/967/11/96

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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