抄録
We have investigated the application of the anodization process to the fabrication of microstructures consisting of single-crystal Si. When anodization is carried out in the dark, porous Si is preferentially formed in a p-type region. The porous region can be used as a sacrificial region. The unanodized Si region forms the components of the microstructures. The shape of the porous region can be controlled by varying the profiles of the n- and p-type regions and their resistivity. It has been found that, by utilizing these characteristics, various microstructures can be formed from single-crystal Si. Fabrication of a cantilever and a piezoresistive gauge for a pressure sensor are demonstrated.
本文言語 | 英語 |
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ホスト出版物のタイトル | Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers |
編集者 | Y. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, al et al |
ページ | 6347-6695 |
ページ数 | 349 |
巻 | 35 |
版 | 12 B |
出版ステータス | 出版済み - 12 1996 |
外部発表 | はい |
イベント | Proceedings of the 1996 9th International MicroProcess Conference, MPC'96 - Kyushu, Jpn 継続期間: 7 8 1996 → 7 11 1996 |
その他
その他 | Proceedings of the 1996 9th International MicroProcess Conference, MPC'96 |
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City | Kyushu, Jpn |
Period | 7/8/96 → 7/11/96 |
All Science Journal Classification (ASJC) codes
- Engineering(all)