We succeeded in improving a TiN/Ge contact by optimizing the TiN deposition. From contact resistance measurements of TiN/n-Ge, the specific contact resistivity was determined to be 7:9 × 10 -6 ωcm 2 for a surface impurity concentration of 3:9 × 10 19 cm -3, suggesting that an interlayer between TiN and Ge is conductive. It was also found that a peripheral surface-state current dominated the reverse leakage current of the contact. The leakage current was significantly decreased by the surface passivation using GeO 2. The passivated TiN/p-Ge contact showed a high hole barrier height of 0.57 eV, implying an extremely low electron barrier height of 0.09 eV.
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