Fabrication of TiN/Ge contact with extremely low electron barrier height

Keisuke Yamamoto, Kenji Harada, Haigui Yang, Dong Wang, Hiroshi Nakashima

研究成果: ジャーナルへの寄稿記事

21 引用 (Scopus)

抄録

We succeeded in improving a TiN/Ge contact by optimizing the TiN deposition. From contact resistance measurements of TiN/n-Ge, the specific contact resistivity was determined to be 7:9 × 10 -6 ωcm 2 for a surface impurity concentration of 3:9 × 10 19 cm -3, suggesting that an interlayer between TiN and Ge is conductive. It was also found that a peripheral surface-state current dominated the reverse leakage current of the contact. The leakage current was significantly decreased by the surface passivation using GeO 2. The passivated TiN/p-Ge contact showed a high hole barrier height of 0.57 eV, implying an extremely low electron barrier height of 0.09 eV.

元の言語英語
記事番号070208
ジャーナルJapanese journal of applied physics
51
発行部数7 PART 1
DOI
出版物ステータス出版済み - 7 1 2012

Fingerprint

Leakage currents
Fabrication
fabrication
Electrons
Surface states
leakage
Contact resistance
Passivation
electrons
Impurities
contact resistance
passivity
electric contacts
interlayers
impurities
electrical resistivity

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Fabrication of TiN/Ge contact with extremely low electron barrier height. / Yamamoto, Keisuke; Harada, Kenji; Yang, Haigui; Wang, Dong; Nakashima, Hiroshi.

:: Japanese journal of applied physics, 巻 51, 番号 7 PART 1, 070208, 01.07.2012.

研究成果: ジャーナルへの寄稿記事

@article{0c8a662c3afc42d8a90bc851ef70205e,
title = "Fabrication of TiN/Ge contact with extremely low electron barrier height",
abstract = "We succeeded in improving a TiN/Ge contact by optimizing the TiN deposition. From contact resistance measurements of TiN/n-Ge, the specific contact resistivity was determined to be 7:9 × 10 -6 ωcm 2 for a surface impurity concentration of 3:9 × 10 19 cm -3, suggesting that an interlayer between TiN and Ge is conductive. It was also found that a peripheral surface-state current dominated the reverse leakage current of the contact. The leakage current was significantly decreased by the surface passivation using GeO 2. The passivated TiN/p-Ge contact showed a high hole barrier height of 0.57 eV, implying an extremely low electron barrier height of 0.09 eV.",
author = "Keisuke Yamamoto and Kenji Harada and Haigui Yang and Dong Wang and Hiroshi Nakashima",
year = "2012",
month = "7",
day = "1",
doi = "10.1143/JJAP.51.070208",
language = "English",
volume = "51",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
number = "7 PART 1",

}

TY - JOUR

T1 - Fabrication of TiN/Ge contact with extremely low electron barrier height

AU - Yamamoto, Keisuke

AU - Harada, Kenji

AU - Yang, Haigui

AU - Wang, Dong

AU - Nakashima, Hiroshi

PY - 2012/7/1

Y1 - 2012/7/1

N2 - We succeeded in improving a TiN/Ge contact by optimizing the TiN deposition. From contact resistance measurements of TiN/n-Ge, the specific contact resistivity was determined to be 7:9 × 10 -6 ωcm 2 for a surface impurity concentration of 3:9 × 10 19 cm -3, suggesting that an interlayer between TiN and Ge is conductive. It was also found that a peripheral surface-state current dominated the reverse leakage current of the contact. The leakage current was significantly decreased by the surface passivation using GeO 2. The passivated TiN/p-Ge contact showed a high hole barrier height of 0.57 eV, implying an extremely low electron barrier height of 0.09 eV.

AB - We succeeded in improving a TiN/Ge contact by optimizing the TiN deposition. From contact resistance measurements of TiN/n-Ge, the specific contact resistivity was determined to be 7:9 × 10 -6 ωcm 2 for a surface impurity concentration of 3:9 × 10 19 cm -3, suggesting that an interlayer between TiN and Ge is conductive. It was also found that a peripheral surface-state current dominated the reverse leakage current of the contact. The leakage current was significantly decreased by the surface passivation using GeO 2. The passivated TiN/p-Ge contact showed a high hole barrier height of 0.57 eV, implying an extremely low electron barrier height of 0.09 eV.

UR - http://www.scopus.com/inward/record.url?scp=84863793846&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863793846&partnerID=8YFLogxK

U2 - 10.1143/JJAP.51.070208

DO - 10.1143/JJAP.51.070208

M3 - Article

AN - SCOPUS:84863793846

VL - 51

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 7 PART 1

M1 - 070208

ER -