Fabrication of TiN/Ge contact with extremely low electron barrier height

Keisuke Yamamoto, Kenji Harada, Haigui Yang, Dong Wang, Hiroshi Nakashima

研究成果: ジャーナルへの寄稿学術誌査読

24 被引用数 (Scopus)

抄録

We succeeded in improving a TiN/Ge contact by optimizing the TiN deposition. From contact resistance measurements of TiN/n-Ge, the specific contact resistivity was determined to be 7:9 × 10 -6 ωcm 2 for a surface impurity concentration of 3:9 × 10 19 cm -3, suggesting that an interlayer between TiN and Ge is conductive. It was also found that a peripheral surface-state current dominated the reverse leakage current of the contact. The leakage current was significantly decreased by the surface passivation using GeO 2. The passivated TiN/p-Ge contact showed a high hole barrier height of 0.57 eV, implying an extremely low electron barrier height of 0.09 eV.

本文言語英語
論文番号070208
ジャーナルJapanese journal of applied physics
51
7 PART 1
DOI
出版ステータス出版済み - 7月 2012

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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