Fabrication of vertical thin film FEA using ion-induced bending technique

T. Yoshida; C. Yasumuro; M. Nagao; S. Kanemaru; A. Baba; Tanemasa Asano

Fabrication of vertical thin film FEA using ion-induced bending technique

T. Yoshida, C. Yasumuro, M. Nagao, S. Kanemaru, A. Baba, Tanemasa Asano

集積電子システム

研究成果: Contribution to conference › Paper › 査読

2 被引用数 (Scopus)

抄録

We proposed a vertical thin film (VTF) formed by ion induced bending technique to realize a field emission display (FED). The bending technique can form micro-meter sized high-aspect ratio emitting tip from 100-nm-thick thin film by ion irradiation without thick film deposition. However, the top of the VTF becomes blunt during ion irradiation even though the film edge was very sharp before the irradiation. We demonstrate the sharpening method of the VTF using Ar ion etching. The apex radius of the VTF emitter decreased from 100 nm to 20 nm. We fabricated gated VTF emitter and confirmed electron emission from sharpened tip.

本文言語	英語
ページ	2209-2212
ページ数	4
出版ステータス	出版済み - 12 1 2007
イベント	14th International Display Workshops, IDW '07 - Sapporo, 日本継続期間: 12 5 2007 → 12 5 2007

その他

その他	14th International Display Workshops, IDW '07
Country	日本
City	Sapporo
Period	12/5/07 → 12/5/07

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging
Atomic and Molecular Physics, and Optics

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引用スタイル

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abstract = "We proposed a vertical thin film (VTF) formed by ion induced bending technique to realize a field emission display (FED). The bending technique can form micro-meter sized high-aspect ratio emitting tip from 100-nm-thick thin film by ion irradiation without thick film deposition. However, the top of the VTF becomes blunt during ion irradiation even though the film edge was very sharp before the irradiation. We demonstrate the sharpening method of the VTF using Ar ion etching. The apex radius of the VTF emitter decreased from 100 nm to 20 nm. We fabricated gated VTF emitter and confirmed electron emission from sharpened tip.",

author = "T. Yoshida and C. Yasumuro and M. Nagao and S. Kanemaru and A. Baba and Tanemasa Asano",

year = "2007",

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TY - CONF

T1 - Fabrication of vertical thin film FEA using ion-induced bending technique

AU - Yoshida, T.

AU - Yasumuro, C.

AU - Nagao, M.

AU - Kanemaru, S.

AU - Baba, A.

AU - Asano, Tanemasa

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We proposed a vertical thin film (VTF) formed by ion induced bending technique to realize a field emission display (FED). The bending technique can form micro-meter sized high-aspect ratio emitting tip from 100-nm-thick thin film by ion irradiation without thick film deposition. However, the top of the VTF becomes blunt during ion irradiation even though the film edge was very sharp before the irradiation. We demonstrate the sharpening method of the VTF using Ar ion etching. The apex radius of the VTF emitter decreased from 100 nm to 20 nm. We fabricated gated VTF emitter and confirmed electron emission from sharpened tip.

AB - We proposed a vertical thin film (VTF) formed by ion induced bending technique to realize a field emission display (FED). The bending technique can form micro-meter sized high-aspect ratio emitting tip from 100-nm-thick thin film by ion irradiation without thick film deposition. However, the top of the VTF becomes blunt during ion irradiation even though the film edge was very sharp before the irradiation. We demonstrate the sharpening method of the VTF using Ar ion etching. The apex radius of the VTF emitter decreased from 100 nm to 20 nm. We fabricated gated VTF emitter and confirmed electron emission from sharpened tip.

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SP - 2209

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T2 - 14th International Display Workshops, IDW '07

Y2 - 5 December 2007 through 5 December 2007

ER -