抄録
We proposed a vertical thin film (VTF) formed by ion induced bending technique to realize a field emission display (FED). The bending technique can form micro-meter sized high-aspect ratio emitting tip from 100-nm-thick thin film by ion irradiation without thick film deposition. However, the top of the VTF becomes blunt during ion irradiation even though the film edge was very sharp before the irradiation. We demonstrate the sharpening method of the VTF using Ar ion etching. The apex radius of the VTF emitter decreased from 100 nm to 20 nm. We fabricated gated VTF emitter and confirmed electron emission from sharpened tip.
| 本文言語 | 英語 |
|---|---|
| ページ | 2209-2212 |
| ページ数 | 4 |
| 出版ステータス | 出版済み - 12 1 2007 |
| イベント | 14th International Display Workshops, IDW '07 - Sapporo, 日本 継続期間: 12 5 2007 → 12 5 2007 |
その他
| その他 | 14th International Display Workshops, IDW '07 |
|---|---|
| 国/地域 | 日本 |
| City | Sapporo |
| Period | 12/5/07 → 12/5/07 |
All Science Journal Classification (ASJC) codes
- 電子工学および電気工学
- 電子材料、光学材料、および磁性材料
- 放射線学、核医学およびイメージング
- 原子分子物理学および光学