Fabrication of vertical thin film FEA using ion-induced bending technique

T. Yoshida, C. Yasumuro, M. Nagao, S. Kanemaru, A. Baba, Tanemasa Asano

研究成果: Contribution to conferencePaper査読

2 被引用数 (Scopus)

抄録

We proposed a vertical thin film (VTF) formed by ion induced bending technique to realize a field emission display (FED). The bending technique can form micro-meter sized high-aspect ratio emitting tip from 100-nm-thick thin film by ion irradiation without thick film deposition. However, the top of the VTF becomes blunt during ion irradiation even though the film edge was very sharp before the irradiation. We demonstrate the sharpening method of the VTF using Ar ion etching. The apex radius of the VTF emitter decreased from 100 nm to 20 nm. We fabricated gated VTF emitter and confirmed electron emission from sharpened tip.

本文言語英語
ページ2209-2212
ページ数4
出版ステータス出版済み - 12 1 2007
イベント14th International Display Workshops, IDW '07 - Sapporo, 日本
継続期間: 12 5 200712 5 2007

その他

その他14th International Display Workshops, IDW '07
Country日本
CitySapporo
Period12/5/0712/5/07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Atomic and Molecular Physics, and Optics

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