Fabrication of ZnInON/ZnO multi-quantum well solar cells

Koichi Matsushima, Ryota Shimizu, Tomoaki Ide, Daisuke Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

研究成果: ジャーナルへの寄稿記事

6 引用 (Scopus)

抄録

We report on fabrication and photovoltaic characteristics of solar cells with ZnInON/ZnO multi-quantum wells (MQWs) in the intrinsic layer of p-i-n structure by RF magnetron sputtering. We employed two kinds of p layers: one is p-GaN and the other is p-Si. Under solar simulator light, the short-circuit current (Jsc) and the open-circuit voltage (Voc) of the solar cells on p-GaN templates are 1.9 μA/cm2 and 0.16 V, whereas Jsc and Voc are enhanced to 2.5 μA/cm2 and 0.19 V under simultaneous irradiation of green laser light (532 nm) and the solar simulator light. Solar cells on p-Si substrates do not show such enhancement. A possible origin of the enhancement is a large piezoelectric field generated in strained ZnInON wells coherently grown on p-GaN template.

元の言語英語
ページ(範囲)106-111
ページ数6
ジャーナルThin Solid Films
587
DOI
出版物ステータス出版済み - 7 31 2015

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Semiconductor quantum wells
solar simulators
Solar cells
solar cells
quantum wells
Fabrication
fabrication
templates
Simulators
Methyl Green
augmentation
Open circuit voltage
short circuit currents
open circuit voltage
Short circuit currents
Magnetron sputtering
magnetron sputtering
Irradiation
irradiation
Lasers

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

これを引用

Fabrication of ZnInON/ZnO multi-quantum well solar cells. / Matsushima, Koichi; Shimizu, Ryota; Ide, Tomoaki; Yamashita, Daisuke; Seo, Hyunwoong; Koga, Kazunori; Shiratani, Masaharu; Itagaki, Naho.

:: Thin Solid Films, 巻 587, 31.07.2015, p. 106-111.

研究成果: ジャーナルへの寄稿記事

Matsushima K, Shimizu R, Ide T, Yamashita D, Seo H, Koga K その他. Fabrication of ZnInON/ZnO multi-quantum well solar cells. Thin Solid Films. 2015 7 31;587:106-111. https://doi.org/10.1016/j.tsf.2015.01.012
Matsushima, Koichi ; Shimizu, Ryota ; Ide, Tomoaki ; Yamashita, Daisuke ; Seo, Hyunwoong ; Koga, Kazunori ; Shiratani, Masaharu ; Itagaki, Naho. / Fabrication of ZnInON/ZnO multi-quantum well solar cells. :: Thin Solid Films. 2015 ; 巻 587. pp. 106-111.
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abstract = "We report on fabrication and photovoltaic characteristics of solar cells with ZnInON/ZnO multi-quantum wells (MQWs) in the intrinsic layer of p-i-n structure by RF magnetron sputtering. We employed two kinds of p layers: one is p-GaN and the other is p-Si. Under solar simulator light, the short-circuit current (Jsc) and the open-circuit voltage (Voc) of the solar cells on p-GaN templates are 1.9 μA/cm2 and 0.16 V, whereas Jsc and Voc are enhanced to 2.5 μA/cm2 and 0.19 V under simultaneous irradiation of green laser light (532 nm) and the solar simulator light. Solar cells on p-Si substrates do not show such enhancement. A possible origin of the enhancement is a large piezoelectric field generated in strained ZnInON wells coherently grown on p-GaN template.",
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AU - Matsushima, Koichi

AU - Shimizu, Ryota

AU - Ide, Tomoaki

AU - Yamashita, Daisuke

AU - Seo, Hyunwoong

AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Itagaki, Naho

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N2 - We report on fabrication and photovoltaic characteristics of solar cells with ZnInON/ZnO multi-quantum wells (MQWs) in the intrinsic layer of p-i-n structure by RF magnetron sputtering. We employed two kinds of p layers: one is p-GaN and the other is p-Si. Under solar simulator light, the short-circuit current (Jsc) and the open-circuit voltage (Voc) of the solar cells on p-GaN templates are 1.9 μA/cm2 and 0.16 V, whereas Jsc and Voc are enhanced to 2.5 μA/cm2 and 0.19 V under simultaneous irradiation of green laser light (532 nm) and the solar simulator light. Solar cells on p-Si substrates do not show such enhancement. A possible origin of the enhancement is a large piezoelectric field generated in strained ZnInON wells coherently grown on p-GaN template.

AB - We report on fabrication and photovoltaic characteristics of solar cells with ZnInON/ZnO multi-quantum wells (MQWs) in the intrinsic layer of p-i-n structure by RF magnetron sputtering. We employed two kinds of p layers: one is p-GaN and the other is p-Si. Under solar simulator light, the short-circuit current (Jsc) and the open-circuit voltage (Voc) of the solar cells on p-GaN templates are 1.9 μA/cm2 and 0.16 V, whereas Jsc and Voc are enhanced to 2.5 μA/cm2 and 0.19 V under simultaneous irradiation of green laser light (532 nm) and the solar simulator light. Solar cells on p-Si substrates do not show such enhancement. A possible origin of the enhancement is a large piezoelectric field generated in strained ZnInON wells coherently grown on p-GaN template.

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