Fabrication of ZnO crystals by UV-laser annealing on ZnO nanoparticles prepared by laser ablation method

T. Shimogaki, H. Kawahara, M. Higashihata, Hiroshi Ikenoue, Daisuke Nakamura, Y. Nakata, T. Okada

研究成果: 著書/レポートタイプへの貢献会議での発言

2 引用 (Scopus)

抄録

Various zinc oxide (ZnO) nanocrystals are expected as new building blocks for optoelectronic devices. Among them, we have studied about fabricating ZnO nanowires using nanoparticle-assisted pulsed laser deposition (NAPLD). Recently, we achieved to fabricate the periodically-aligned ZnO nanowires with a period of from 4 to 5 μm using interfering four-beams of nanosecond ultraviolet (UV) laser processing. ZnO nanowires with diameters of several dozen nanometers were grown on the ZnO buffer layer prepared by pulsed laser deposition at the low-chamber pressure of 3 Pa. Additionally, crystallization of ZnO nanoparticles collected on a sapphire substrate was achieved by UV-laser annealing. In this method, ZnO nanoparticles were collected at room temperature, then they were laser-annealed with a KrF excimer laser. The particle size increased by instantaneous melting and aggregation of ZnO nanoparticles because of the high absorption efficiency of ZnO in the UV spectral region. It was found that the optical property was improved by UV-laser annealing process. Additionally, their x-ray diffraction peaks of wurtzite ZnO crystals had narrower full width half maximum than those before laser annealing.

元の言語英語
ホスト出版物のタイトルOxide-Based Materials and Devices VI
編集者Ferechteh H. Teherani, David C. Look, David J. Rogers
出版者SPIE
ISBN(電子版)9781628414547
DOI
出版物ステータス出版済み - 1 1 2015
イベントOxide-Based Materials and Devices VI - San Francisco, 米国
継続期間: 2 8 20152 11 2015

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
9364
ISSN(印刷物)0277-786X
ISSN(電子版)1996-756X

その他

その他Oxide-Based Materials and Devices VI
米国
San Francisco
期間2/8/152/11/15

Fingerprint

Zinc Oxide
Ultraviolet lasers
Laser Ablation
laser annealing
Laser ablation
Zinc oxide
ultraviolet lasers
Annealing
Ultraviolet
zinc oxides
laser ablation
Nanoparticles
Fabrication
Crystal
Laser
nanoparticles
Crystals
fabrication
crystals
Nanowires

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

これを引用

Shimogaki, T., Kawahara, H., Higashihata, M., Ikenoue, H., Nakamura, D., Nakata, Y., & Okada, T. (2015). Fabrication of ZnO crystals by UV-laser annealing on ZnO nanoparticles prepared by laser ablation method. : F. H. Teherani, D. C. Look, & D. J. Rogers (版), Oxide-Based Materials and Devices VI [93640C] (Proceedings of SPIE - The International Society for Optical Engineering; 巻数 9364). SPIE. https://doi.org/10.1117/12.2078849

Fabrication of ZnO crystals by UV-laser annealing on ZnO nanoparticles prepared by laser ablation method. / Shimogaki, T.; Kawahara, H.; Higashihata, M.; Ikenoue, Hiroshi; Nakamura, Daisuke; Nakata, Y.; Okada, T.

Oxide-Based Materials and Devices VI. 版 / Ferechteh H. Teherani; David C. Look; David J. Rogers. SPIE, 2015. 93640C (Proceedings of SPIE - The International Society for Optical Engineering; 巻 9364).

研究成果: 著書/レポートタイプへの貢献会議での発言

Shimogaki, T, Kawahara, H, Higashihata, M, Ikenoue, H, Nakamura, D, Nakata, Y & Okada, T 2015, Fabrication of ZnO crystals by UV-laser annealing on ZnO nanoparticles prepared by laser ablation method. : FH Teherani, DC Look & DJ Rogers (版), Oxide-Based Materials and Devices VI., 93640C, Proceedings of SPIE - The International Society for Optical Engineering, 巻. 9364, SPIE, Oxide-Based Materials and Devices VI, San Francisco, 米国, 2/8/15. https://doi.org/10.1117/12.2078849
Shimogaki T, Kawahara H, Higashihata M, Ikenoue H, Nakamura D, Nakata Y その他. Fabrication of ZnO crystals by UV-laser annealing on ZnO nanoparticles prepared by laser ablation method. : Teherani FH, Look DC, Rogers DJ, 編集者, Oxide-Based Materials and Devices VI. SPIE. 2015. 93640C. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2078849
Shimogaki, T. ; Kawahara, H. ; Higashihata, M. ; Ikenoue, Hiroshi ; Nakamura, Daisuke ; Nakata, Y. ; Okada, T. / Fabrication of ZnO crystals by UV-laser annealing on ZnO nanoparticles prepared by laser ablation method. Oxide-Based Materials and Devices VI. 編集者 / Ferechteh H. Teherani ; David C. Look ; David J. Rogers. SPIE, 2015. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{3815555323f24ab4b50f2e52ae2cbcd7,
title = "Fabrication of ZnO crystals by UV-laser annealing on ZnO nanoparticles prepared by laser ablation method",
abstract = "Various zinc oxide (ZnO) nanocrystals are expected as new building blocks for optoelectronic devices. Among them, we have studied about fabricating ZnO nanowires using nanoparticle-assisted pulsed laser deposition (NAPLD). Recently, we achieved to fabricate the periodically-aligned ZnO nanowires with a period of from 4 to 5 μm using interfering four-beams of nanosecond ultraviolet (UV) laser processing. ZnO nanowires with diameters of several dozen nanometers were grown on the ZnO buffer layer prepared by pulsed laser deposition at the low-chamber pressure of 3 Pa. Additionally, crystallization of ZnO nanoparticles collected on a sapphire substrate was achieved by UV-laser annealing. In this method, ZnO nanoparticles were collected at room temperature, then they were laser-annealed with a KrF excimer laser. The particle size increased by instantaneous melting and aggregation of ZnO nanoparticles because of the high absorption efficiency of ZnO in the UV spectral region. It was found that the optical property was improved by UV-laser annealing process. Additionally, their x-ray diffraction peaks of wurtzite ZnO crystals had narrower full width half maximum than those before laser annealing.",
author = "T. Shimogaki and H. Kawahara and M. Higashihata and Hiroshi Ikenoue and Daisuke Nakamura and Y. Nakata and T. Okada",
year = "2015",
month = "1",
day = "1",
doi = "10.1117/12.2078849",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Teherani, {Ferechteh H.} and Look, {David C.} and Rogers, {David J.}",
booktitle = "Oxide-Based Materials and Devices VI",
address = "United States",

}

TY - GEN

T1 - Fabrication of ZnO crystals by UV-laser annealing on ZnO nanoparticles prepared by laser ablation method

AU - Shimogaki, T.

AU - Kawahara, H.

AU - Higashihata, M.

AU - Ikenoue, Hiroshi

AU - Nakamura, Daisuke

AU - Nakata, Y.

AU - Okada, T.

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Various zinc oxide (ZnO) nanocrystals are expected as new building blocks for optoelectronic devices. Among them, we have studied about fabricating ZnO nanowires using nanoparticle-assisted pulsed laser deposition (NAPLD). Recently, we achieved to fabricate the periodically-aligned ZnO nanowires with a period of from 4 to 5 μm using interfering four-beams of nanosecond ultraviolet (UV) laser processing. ZnO nanowires with diameters of several dozen nanometers were grown on the ZnO buffer layer prepared by pulsed laser deposition at the low-chamber pressure of 3 Pa. Additionally, crystallization of ZnO nanoparticles collected on a sapphire substrate was achieved by UV-laser annealing. In this method, ZnO nanoparticles were collected at room temperature, then they were laser-annealed with a KrF excimer laser. The particle size increased by instantaneous melting and aggregation of ZnO nanoparticles because of the high absorption efficiency of ZnO in the UV spectral region. It was found that the optical property was improved by UV-laser annealing process. Additionally, their x-ray diffraction peaks of wurtzite ZnO crystals had narrower full width half maximum than those before laser annealing.

AB - Various zinc oxide (ZnO) nanocrystals are expected as new building blocks for optoelectronic devices. Among them, we have studied about fabricating ZnO nanowires using nanoparticle-assisted pulsed laser deposition (NAPLD). Recently, we achieved to fabricate the periodically-aligned ZnO nanowires with a period of from 4 to 5 μm using interfering four-beams of nanosecond ultraviolet (UV) laser processing. ZnO nanowires with diameters of several dozen nanometers were grown on the ZnO buffer layer prepared by pulsed laser deposition at the low-chamber pressure of 3 Pa. Additionally, crystallization of ZnO nanoparticles collected on a sapphire substrate was achieved by UV-laser annealing. In this method, ZnO nanoparticles were collected at room temperature, then they were laser-annealed with a KrF excimer laser. The particle size increased by instantaneous melting and aggregation of ZnO nanoparticles because of the high absorption efficiency of ZnO in the UV spectral region. It was found that the optical property was improved by UV-laser annealing process. Additionally, their x-ray diffraction peaks of wurtzite ZnO crystals had narrower full width half maximum than those before laser annealing.

UR - http://www.scopus.com/inward/record.url?scp=84931863925&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84931863925&partnerID=8YFLogxK

U2 - 10.1117/12.2078849

DO - 10.1117/12.2078849

M3 - Conference contribution

AN - SCOPUS:84931863925

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-Based Materials and Devices VI

A2 - Teherani, Ferechteh H.

A2 - Look, David C.

A2 - Rogers, David J.

PB - SPIE

ER -