A MOD-TFA process using the multi-coating method was applied to form thicker Y123 films on LaAlO3 substrates, and the dependence of the low partial pressure of H2O, P(H2O), for Y123 growth was investigated. As a result, it was found that the crystal alignment of thicker Y123 films could be improved by optimizing the P(H2O). In particular, for a thicker film, it was found that low P(H2O) during the Y123 growth is effective in maintaining expitaxial growth. Consequently, the critical current value for 0.01 m wide (Ic*) of the triple-coated film was increased from 11 kA/m-width to 28 kA/m-width in comparison with that of the single-coated film. Further, it was confirmed that the high in-plane aligned buffer layers is necessary to obtain a high critical current density (Jc) film on a metal substrate. Subsequently, the heat treatment under the low P(H2O) was applied to the CeO2/IBAD-YSZ/Hastelloy substrates using the multi-coating method. The triple-coating Y123 film with 1 μm thickness on the metal substrate achieves the Jc value of 16 GA/m2 at 77.3 K in self fields and the Ic* performance of 15.3 kA/m-width.
|ジャーナル||Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals|
|出版ステータス||出版済み - 4 2002|
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