Facet stability of GaN during tri-halide vapor phase epitaxy: anab initio-based approach

Daichi Yosho, Yuriko Matsuo, Akira Kusaba, Pawel Kempisty, Yoshihiro Kangawa, Hisashi Murakami, Akinori Koukitu

研究成果: Contribution to journalArticle査読

抄録

Anab initio-based approach is used to investigate the facet stability of GaN during tri-halide vapor phase epitaxy (THVPE). First, surface reconstructions are analyzed to create surface phase diagrams as a function of the gaseous pressure and temperature. Next, a triangular wedge model is used to compute absolute surface formation energies with the bulk state as a reference. A Wulff construction is used to predict the crystal growth form composed of energetically preferred facets. The calculated results can be used to control the shape of GaN grown by THVPE.

本文言語英語
ページ(範囲)1423-1428
ページ数6
ジャーナルCrystEngComm
23
6
DOI
出版ステータス出版済み - 2 14 2021

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 材料科学(全般)
  • 凝縮系物理学

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