Facile fabrication method for pn -type and ambipolar transport polyphenylenevinylene-based thin-film field-effect transistors by blending C60 fullerene

Y. Hayashi, H. Kanamori, I. Yamada, A. Takasu, S. Takagi, K. Kaneko

    研究成果: Contribution to journalArticle査読

    45 被引用数 (Scopus)

    抄録

    We have demonstrated the solution-processed p - and n -type transports including ambipolar transport organic thin-film transistors (OTFTs), required for complementary thin-film integrated circuit technology, by a facile method of blending the n -type C60 and the p -type [poly(2-methoxy-5-[2'-ethyl-hexyloxy]- 1,4-phenylene vinylene] (MEH-PPV). The carrier transport of PPV-based thin-film field-effect transistors with various C60 compositions are investigated by using the field-effect gated structure. One of the important findings is that tunable electronic properties of OTFTs are achieved by controlling C60 composition using a simple and an inexpensive spin-cast technology. The mobility increases with increase in the C60 composition in both n - and p -type OTFTs. Temperature measurements on n -type OTFTs revealed that transport follows a thermally activated hopping transport model with small activation energy.

    本文言語英語
    論文番号052104
    ページ(範囲)1-3
    ページ数3
    ジャーナルApplied Physics Letters
    86
    5
    DOI
    出版ステータス出版済み - 1 31 2005

    All Science Journal Classification (ASJC) codes

    • 物理学および天文学(その他)

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