Ferroelectric P(VDF-TrFE) wrapped InGaAs nanowires for ultralow-power artificial synapses

Pengshan Xie, Yulong Huang, Wei Wang, You Meng, Zhengxun Lai, Fei Wang, Sen Po Yip, Xiuming Bu, Weijun Wang, Dengji Li, Jia Sun, Johnny C. Ho

研究成果: ジャーナルへの寄稿学術誌査読

4 被引用数 (Scopus)

抄録

The gallop of artificial intelligence ignites urgent demand on information processing systems with ultralow power consumption, reliable multi-parameter control and high operation efficiency. Here, the poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) wrapped InGaAs nanowire (NW) artificial synapses capable to operate with record-low subfemtojoule power consumption are presented. The essential synaptic behaviors are mimicked and modulated effectively by adjusting the thickness of top P(VDF-TrFE) films. Moreover, the long-term depression is realized by applying visible light (450 nm) because of the negative photoconductivity of InGaAs nanowires. Combined with optimal P(VDF-TrFE) films, the synaptic devices have the more linear long-term potentiation/depression characteristics and the faster supervised learning process simulated by hardware neural networks. The Pavlovian conditioning is also performed by combining electrical and infrared stimuli. Evidently, these ultralow-operating-power synapses are demonstrated with the brain-like behaviors, effective function modulation, and more importantly, the synergistic photoelectric modulation, which illustrates the promising potentials for neuromorphic computing systems.

本文言語英語
論文番号106654
ジャーナルNano Energy
91
DOI
出版ステータス出版済み - 1月 2022

!!!All Science Journal Classification (ASJC) codes

  • 再生可能エネルギー、持続可能性、環境
  • 材料科学(全般)
  • 電子工学および電気工学

フィンガープリント

「Ferroelectric P(VDF-TrFE) wrapped InGaAs nanowires for ultralow-power artificial synapses」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル