Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks

Tomonori Nishimura, Lun Xu, Shigehisa Shibayama, Takeaki Yajima, Shinji Migita, Akira Toriumi

研究成果: Contribution to journalArticle査読

43 被引用数 (Scopus)

抄録

We report on the impact of TiN interfaces on the ferroelectricity of nondoped HfO2. Ferroelectric properties of nondoped HfO2 in TiN/HfO2/TiN stacks are shown in capacitance-voltage and polarization-voltage characteristics. The Curie temperature is also estimated to be around 500 °C. The ferroelectricity of nondoped HfO2 clearly appears by thinning HfO2 film down to ∼35 nm. We directly revealed in thermal treatments that the ferroelectric HfO2 film on TiN was maintained by covering the top surface of HfO2 with TiN, while it was followed by a phase transition to the paraelectric phase in the case of the open surface of HfO2. Thus, it is concluded that the ferroelectricity in nondoped HfO2 in this study was mainly driven by both of top and bottom TiN interfaces.

本文言語英語
論文番号08PB01
ジャーナルJapanese journal of applied physics
55
8S2
DOI
出版ステータス出版済み - 2016
外部発表はい

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント 「Ferroelectricity of nondoped thin HfO<sub>2</sub> films in TiN/HfO<sub>2</sub>/TiN stacks」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル