Few-layer epitaxial graphene grown on vicinal 6H-SiC studied by deep ultraviolet Raman spectroscopy

Kenji Kisoda, Susumu Kamoi, Noriyuki Hasuike, Hiroshi Harima, Kouhei Morita, Tanaka Satoru, Akihiro Hashimoto

研究成果: ジャーナルへの寄稿記事

16 引用 (Scopus)

抄録

Few layer epitaxial graphenes (1.8-3.0 layers) grown on vicinal 6H-SiC (0001) were characterized by deep ultraviolet Raman spectroscopy. Shallow penetration depth of the probe laser enabled us to observe G-peak of graphene without subtraction of the SiC substrate signal from observed spectra. The G-peak was greatly shifted to higher frequency compared to that of graphite due to in-plane compressive stress deriving from the substrate. The frequency shift decreased with the number of graphene layers because of stress relaxation from layer to layer. Our experiment suggests that the stress is completely relaxed within five to six graphene layers.

元の言語英語
記事番号033108
ジャーナルApplied Physics Letters
97
発行部数3
DOI
出版物ステータス出版済み - 7 19 2010

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ultraviolet spectroscopy
graphene
Raman spectroscopy
stress relaxation
subtraction
frequency shift
penetration
graphite
probes
lasers

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Few-layer epitaxial graphene grown on vicinal 6H-SiC studied by deep ultraviolet Raman spectroscopy. / Kisoda, Kenji; Kamoi, Susumu; Hasuike, Noriyuki; Harima, Hiroshi; Morita, Kouhei; Satoru, Tanaka; Hashimoto, Akihiro.

:: Applied Physics Letters, 巻 97, 番号 3, 033108, 19.07.2010.

研究成果: ジャーナルへの寄稿記事

Kisoda, Kenji ; Kamoi, Susumu ; Hasuike, Noriyuki ; Harima, Hiroshi ; Morita, Kouhei ; Satoru, Tanaka ; Hashimoto, Akihiro. / Few-layer epitaxial graphene grown on vicinal 6H-SiC studied by deep ultraviolet Raman spectroscopy. :: Applied Physics Letters. 2010 ; 巻 97, 番号 3.
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AU - Satoru, Tanaka

AU - Hashimoto, Akihiro

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