TY - JOUR
T1 - Field-access scheme of bloch line memory
AU - Asada, H.
AU - Shigenobu, M.
AU - Nakamura, K.
AU - Yoshimatsu, N.
AU - Konishi, S.
N1 - Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 1987/9
Y1 - 1987/9
N2 - The Bloch line propagation under bias pulsed fields has been studied by using the computer-simulation. Stripe domain walls were stabilized around 100 % grooved regions. A potential well to define the bit position was generated by a stray field from very thin high coercive-force films. The pulsed field amplitude of several 0e and several tens Oe are required for propagating VBL pairs in 5 µm and.5 µm bubble-garnet films, respectively. A larger damping parameter and a smaller gyromagnetic constant than the usual bubble garnet film are desirable for reliable propagation. Magnetic and electric circuits are proposed to supply fast-rise and slow-fall bias pulsed fields.
AB - The Bloch line propagation under bias pulsed fields has been studied by using the computer-simulation. Stripe domain walls were stabilized around 100 % grooved regions. A potential well to define the bit position was generated by a stray field from very thin high coercive-force films. The pulsed field amplitude of several 0e and several tens Oe are required for propagating VBL pairs in 5 µm and.5 µm bubble-garnet films, respectively. A larger damping parameter and a smaller gyromagnetic constant than the usual bubble garnet film are desirable for reliable propagation. Magnetic and electric circuits are proposed to supply fast-rise and slow-fall bias pulsed fields.
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U2 - 10.1109/TMAG.1987.1065765
DO - 10.1109/TMAG.1987.1065765
M3 - Article
AN - SCOPUS:0023417078
VL - 23
SP - 2326
EP - 2328
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
SN - 0018-9464
IS - 5
ER -