Field effect transistor type NO2 sensor combined with NaNO2 auxiliary phase

Seiji Nakata, Kengo Shimanoe, Norio Miura, Noboru Yamazoe

研究成果: ジャーナルへの寄稿記事

15 引用 (Scopus)

抄録

A field effect transistor (FET) sensor for NO2 was fabricated by depositing an NaNO2 layer together with an Au electrode over the gate area. The NaNO2-attached FET exhibited almost ideal FET behavior at 180°C in air. The threshold voltage was found to shift up ward in a well controlled manner with increasing NO2 concentration of the atmosphere. Under the condition of a fixed source-drain voltage (3.0V), the gate-source voltage (VGS) necessary to keep the drain current at a small constant value (200μA) was found to increase linearly with an increase in the logarithm of NO2 concentration in the range from 500ppb to 10ppm. The times of 90% response and recovery to switching-on and -off 500ppb NO2 were about 2 and 4min, respectively. The NO2 sensitivity was hardly or only slightly affected by variations in the concentrations of coexistent O2, CO2 or H2O.

元の言語英語
ページ(範囲)512-516
ページ数5
ジャーナルSensors and Actuators, B: Chemical
77
発行部数1-2
DOI
出版物ステータス出版済み - 6 15 2001

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Field effect transistors
field effect transistors
sensors
Sensors
Drain current
Electric potential
electric potential
logarithms
Threshold voltage
threshold voltage
recovery
atmospheres
Recovery
Electrodes
electrodes
sensitivity
shift
air
Air

All Science Journal Classification (ASJC) codes

  • Analytical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

これを引用

Field effect transistor type NO2 sensor combined with NaNO2 auxiliary phase. / Nakata, Seiji; Shimanoe, Kengo; Miura, Norio; Yamazoe, Noboru.

:: Sensors and Actuators, B: Chemical, 巻 77, 番号 1-2, 15.06.2001, p. 512-516.

研究成果: ジャーナルへの寄稿記事

Nakata, Seiji ; Shimanoe, Kengo ; Miura, Norio ; Yamazoe, Noboru. / Field effect transistor type NO2 sensor combined with NaNO2 auxiliary phase. :: Sensors and Actuators, B: Chemical. 2001 ; 巻 77, 番号 1-2. pp. 512-516.
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