Field emission from an ion-beam-modified polyimide film

Akiyoshi Baba, Katsuya Higa, Tanemasa Asano

研究成果: ジャーナルへの寄稿記事

23 引用 (Scopus)

抄録

We demonstrate the field emission of electrons from an ion-beam-modified polyimide material. A 25-μ-thick polyimide sheet is used as the starting material. The electrical resistivity of this polyimide film is found to abruptly decrease after Ar ion irradiation at doses higher than 5×1015 cm-2. To prepare a field emitter array, a pyramid-like structure is fabricated directly on the polyimide sheet using oxygen-plasma etching, and Ar ions are subsequently irradiated. An emission current of the order μA is observed at relatively low electric fields for the irradiated samples, while no emission is detected from unirradiated samples. An emission current stability of 1.9±0.3 μA is observed. The current-voltage characteristics of the polyimide field emitters are compared with those of a field emitter made from a photoresist.

元の言語英語
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
38
発行部数3 A
出版物ステータス出版済み - 1 1 1999
外部発表Yes

Fingerprint

polyimides
Polyimides
Field emission
Ion beams
field emission
ion beams
emitters
Plasma etching
oxygen plasma
plasma etching
Photoresists
Current voltage characteristics
Ion bombardment
pyramids
ion irradiation
photoresists
Dosimetry
Electric fields
dosage
electrical resistivity

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

これを引用

Field emission from an ion-beam-modified polyimide film. / Baba, Akiyoshi; Higa, Katsuya; Asano, Tanemasa.

:: Japanese Journal of Applied Physics, Part 2: Letters, 巻 38, 番号 3 A, 01.01.1999.

研究成果: ジャーナルへの寄稿記事

Baba, Akiyoshi ; Higa, Katsuya ; Asano, Tanemasa. / Field emission from an ion-beam-modified polyimide film. :: Japanese Journal of Applied Physics, Part 2: Letters. 1999 ; 巻 38, 番号 3 A.
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