Field emission from an ion irradiated photoresist

Tanemasa Asano, Eiji Shibata, Daisuke Sasaguri, Kenji Makihira, Katsuya Higa

研究成果: Contribution to journalArticle査読

19 被引用数 (Scopus)

抄録

The field emission from Ar ion irradiated photoresist material is demonstrated. A photoresist of novolac-type positive-tone is used as the test material. The electrical resistivity of the photoresist film is found to decrease after Ar ion implantation at doses on the order of 1016 cm-2. Raman spectroscopy shows that carbon-carbon bonds such as the graphite bond are produced due to ion bombardment. For the field emission, a pyramid-like structure is prepared using oxygen-plasma etching and Ar ions are implanted to the pyramid-like structured photoresist. Electron emission of the order of 10-6 A is observed for implanted samples, while no emission is detected from unimplanted samples.

本文言語英語
ページ(範囲)L818-L820
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
36
6
DOI
出版ステータス出版済み - 1997
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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