Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal

Hiromichi Ohta, Yukio Sato, Takeharu Kato, Sungwng Kim, Kenji Nomura, Yuichi Ikuhara, Hideo Hosono

研究成果: Contribution to journalArticle査読

61 被引用数 (Scopus)

抄録

Water is composed of two strong electrochemically active agents, H + and OH- ions, but has not been used as an active electronic material in oxide semiconductors. In this study, we demonstrate that water-infiltrated nanoporous glass electrically switches an oxide semiconductor from insulator to metal. We fabricated a field-effect transistor structure on an oxide semiconductor, SrTiO3, using water-infiltrated nanoporous glass-amorphous 12CaO·7Al2O3 -as the gate insulator. Positive gate voltage, electron accumulation, water electrolysis and electrochemical reduction occur successively on the SrTiO3 surface at room temperature. This leads to the formation of a thin (∼3 nm) metal layer with an extremely high electron concentration (1015-10 16cm-2), which exhibits exotic thermoelectric behaviour. The electron activity of water as it infiltrates nanoporous glass may find many useful applications in electronics or in energy storage.

本文言語英語
論文番号118
ジャーナルNature communications
1
8
DOI
出版ステータス出版済み - 2010
外部発表はい

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

フィンガープリント 「Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル