Field-plate structure dependence of current collapse phenomena in high-voltage GaN-HEMTs

Wataru Saito, Yorito Kakiuchi, Tomohiro Nitta, Yasunobu Saito, Takao Noda, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno, Masakazu Yamaguchi

研究成果: Contribution to journalArticle査読

71 被引用数 (Scopus)

抄録

Four types of the field-plate (FP) structure were fabricated to discuss the relation between the current collapse phenomena and the electric-field peak in high-voltage GaN-HEMTs. The on-resistance increase caused by current collapse phenomena is dramatically reduced by the single-gate-FP and dual-FP structures compared with the sourceFP structure, because the gate-edge electric field was reduced by the gate-FP electrode. The dual-FP structure was slightly more effective to suppress the collapse phenomena than the single-gate-FP structure, because the two-step FP structure relaxes the electric-field concentration at the FP edge. These results show that the gate-edge peak strongly affects the on-resistance modulation. Although the FP edge peak also causes the collapse phenomena, its influence is weak.

本文言語英語
論文番号5471189
ページ(範囲)659-661
ページ数3
ジャーナルIEEE Electron Device Letters
31
7
DOI
出版ステータス出版済み - 7 2010
外部発表はい

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

フィンガープリント 「Field-plate structure dependence of current collapse phenomena in high-voltage GaN-HEMTs」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル