Filament formation and erasure in molybdenum oxide during resistive switching cycles

Masaki Kudo, Masashi Arita, Yuuki Ohno, Yasuo Takahashi

研究成果: Contribution to journalArticle査読

35 被引用数 (Scopus)

抄録

In-situ filament observations were carried out on the Cu/MoOx/TiN resistive random access memory (ReRAM) by using transmission electron microscopy. Multiple positive and negative I-V cycles were investigated. Clear set-reset bipolar switch corresponding to the characteristics of conventional ReRAM devices was recognized. Filament grew from TiN to Cu in the set cycle and shrank from TiN to Cu in the reset cycle. However, there was no clear contrast change in the image at the switching moment, and thus, switching is thought to occur in a local region of the filament. When the current was large at reset, the filament shrank much, and its position tended to change.

本文言語英語
論文番号173504
ジャーナルApplied Physics Letters
105
17
DOI
出版ステータス出版済み - 10 27 2014
外部発表はい

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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