抄録
In-situ filament observations were carried out on the Cu/MoOx/TiN resistive random access memory (ReRAM) by using transmission electron microscopy. Multiple positive and negative I-V cycles were investigated. Clear set-reset bipolar switch corresponding to the characteristics of conventional ReRAM devices was recognized. Filament grew from TiN to Cu in the set cycle and shrank from TiN to Cu in the reset cycle. However, there was no clear contrast change in the image at the switching moment, and thus, switching is thought to occur in a local region of the filament. When the current was large at reset, the filament shrank much, and its position tended to change.
本文言語 | 英語 |
---|---|
論文番号 | 173504 |
ジャーナル | Applied Physics Letters |
巻 | 105 |
号 | 17 |
DOI | |
出版ステータス | 出版済み - 10月 27 2014 |
外部発表 | はい |
!!!All Science Journal Classification (ASJC) codes
- 物理学および天文学(その他)