抄録
A plasma chemical vapor deposition reactor with an additional source of H atoms, in which concentrations of both H atoms and Cu-containing radicals are controllable independently, is developed to fill fine patterns for interconnects with high-purity Cu. Cu-filling property in trench structure with the reactor is evaluated under deposition conditions of high-purity (≈100%) Cu films. The surface reaction probability β of Cu-containing radicals is deduced from the coverage shape of Cu deposition in the trench structure and its Monte Carlo simulation. With decreasing the main discharge power Pm, the β value decreases from 0.2 for Pm = 35 W to 0.01 for Pm = 3 W. Using this reactor, we have realized filling of high purity Cu in a trench 0.3 μm wide and 0.9 μm deep.
本文言語 | 英語 |
---|---|
ページ(範囲) | 57-61 |
ページ数 | 5 |
ジャーナル | Research Reports on Information Science and Electrical Engineering of Kyushu University |
巻 | 5 |
号 | 1 |
出版ステータス | 出版済み - 3月 1 2000 |
外部発表 | はい |
!!!All Science Journal Classification (ASJC) codes
- コンピュータ サイエンス(全般)
- 電子工学および電気工学