Film formation by motion control of ionized precursors in electric field

Motoaki Adachi, Toshiyuki Fujimoto, Koichi Nakaso, Kikuo Okuyama, Frank G. Shi, Hideki Sato, Toshio Ando, Hideki Tomioka

研究成果: Contribution to journalArticle査読

6 被引用数 (Scopus)

抄録

A chemical vapor deposition (CVD) method, called ionization CVD, in which ionized source molecules were deposited on a substrate by Coulombic force, was developed to control gas-phase reaction and film morphology. This method was applied to the tetraethylorthosilicate (TEOS)/ ozone-atmospheric pressure chemical vapor deposition process by using the surface corona discharge. TEOS/O 3 films deposited on SiN and SiO 2 films by this CVD method showed good properties for the flow shape, the gap filling and the surface morphology. In Fourier-transform infrared spectra of gas-phase intermediates collected in the vapor condenser, the intensity of the absorption peak at 600 cm -1 was different between ionized intermediates and nonionized intermediates.

本文言語英語
ページ(範囲)1973-1975
ページ数3
ジャーナルApplied Physics Letters
75
13
DOI
出版ステータス出版済み - 9 27 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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