Film thickness dependence of ferroelectric properties of (111)-Oriented epitaxial Bi(Mg 1/2Ti 1/2)O 3 films

Takahiro Oikawa, Shintaro Yasui, Takayuki Watanabe, Hisato Yabuta, Yoshitaka Ehara, Tetsuro Fukui, Hiroshi Funakubo

研究成果: ジャーナルへの寄稿学術誌査読

15 被引用数 (Scopus)

抄録

The origin of the ferroelectricity of Bi(Mg 1/2Ti 1/2)O 3 films was investigated. Epitaxial Bi(Mg 1/2Ti 1/2)O 3 films with film thicknesses of 50 to 800nm were grown on (111)cSrRuO 3/(111)SrTiO 3 substrates by pulsed laser deposition. A Bi(Mg 1/2Ti 1/2)O 3 film was not strongly clamped from the substrate and identified to have rhombohedral symmetry with a = 0.398nm and α = 89:8°, which was independent of film thickness within 100 to 800 nm. The relative dielectric constant, remanent polarization, and coercive field of the Bi(Mg 1/2Ti 1/2)O 3 films at room temperature were almost constant at about 250, 60 μC/cm 2, and 240 kV/cm, respectively, for film thicknesses above 200 nm. These data suggest that Bi(Mg 1/2Ti 1/2)O 3 films are ferroelectric.

本文言語英語
論文番号09LA04
ジャーナルJapanese journal of applied physics
51
9 PART 2
DOI
出版ステータス出版済み - 9月 2012
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Film thickness dependence of ferroelectric properties of (111)-Oriented epitaxial Bi(Mg 1/2Ti 1/2)O 3 films」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル