The origin of the ferroelectricity of Bi(Mg 1/2Ti 1/2)O 3 films was investigated. Epitaxial Bi(Mg 1/2Ti 1/2)O 3 films with film thicknesses of 50 to 800nm were grown on (111)cSrRuO 3/(111)SrTiO 3 substrates by pulsed laser deposition. A Bi(Mg 1/2Ti 1/2)O 3 film was not strongly clamped from the substrate and identified to have rhombohedral symmetry with a = 0.398nm and α = 89:8°, which was independent of film thickness within 100 to 800 nm. The relative dielectric constant, remanent polarization, and coercive field of the Bi(Mg 1/2Ti 1/2)O 3 films at room temperature were almost constant at about 250, 60 μC/cm 2, and 240 kV/cm, respectively, for film thicknesses above 200 nm. These data suggest that Bi(Mg 1/2Ti 1/2)O 3 films are ferroelectric.
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