First principles and themodynamical studies on matel organic vaper phase epitaxy of GaN

Kenji Shiraishi, Kazuki Sekiguchi, Hiroki Shirakawa, Kenta Chokawa, Masaaki Araidai, Yoshihiro Kangawa, Koichi Kakimoto

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

4 被引用数 (Scopus)

抄録

We analyzed metal organic vapor phase epitaxy growth mechanism of Ill-nitride semiconductors, GaN, A1N and InN based on first-principles calculations and thermodynamic analysis. With this calculated methods, we investigate the decomposition process of the group III source gases, X(CH 3 )3 (X = Ga, Al, In) at finite temperatures and whether the (CH 3 ) 3 AlNH 2 adduct can be formed or not. Our calculated results show that (CH 3 ) 2 GaNH 2 adduct cannot be formed in the gas phase reaction in GaN MOVPE. Whereas, (CH 3 ) 2 AINH 2 adduct can be formed so much in gas phase in A1N MOVPE. In case of GaN MOVPE, trimethylgallium (TMG, [Ga(CH 3 ) 3 ]) almost decomposes into Ga gas on growth surface by the assistance of H 2 carrier gas instead of (CH 3 ) 2 GaNH 2 adduct formation. Moreover, in case of InN MOVPE, (CH 3 ) 2 lnNH 2 adduct formation cannot occur and it is relatively easy that In gas is produced even if there is no H 2 carrier gas.

本文言語英語
ホスト出版物のタイトルECS Transactions
編集者Durga Misra, Stefan De Gendt, Michel Housa, Koji Kita, Dolf Landheer
出版社Electrochemical Society Inc.
ページ295-301
ページ数7
1
ISBN(電子版)9781607685395
DOI
出版ステータス出版済み - 1 1 2017
イベント15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting - National Harbor, 米国
継続期間: 10 1 201710 5 2017

出版物シリーズ

名前ECS Transactions
番号1
80
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

その他

その他15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting
Country米国
CityNational Harbor
Period10/1/1710/5/17

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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