First principles and themodynamical studies on matel organic vaper phase epitaxy of GaN

Kenji Shiraishi, Kazuki Sekiguchi, Hiroki Shirakawa, Kenta Chokawa, Masaaki Araidai, Yoshihiro Kangawa, Koichi Kakimoto

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

6 被引用数 (Scopus)

抄録

We analyzed metal organic vapor phase epitaxy growth mechanism of Ill-nitride semiconductors, GaN, A1N and InN based on first-principles calculations and thermodynamic analysis. With this calculated methods, we investigate the decomposition process of the group III source gases, X(CH3)3 (X = Ga, Al, In) at finite temperatures and whether the (CH3)3 AlNH2 adduct can be formed or not. Our calculated results show that (CH3)2 GaNH2 adduct cannot be formed in the gas phase reaction in GaN MOVPE. Whereas, (CH3)2AINH2 adduct can be formed so much in gas phase in A1N MOVPE. In case of GaN MOVPE, trimethylgallium (TMG, [Ga(CH3)3]) almost decomposes into Ga gas on growth surface by the assistance of H2 carrier gas instead of (CH3)2GaNH2 adduct formation. Moreover, in case of InN MOVPE, (CH3)2lnNH2 adduct formation cannot occur and it is relatively easy that In gas is produced even if there is no H2 carrier gas.

本文言語英語
ホスト出版物のタイトルECS Transactions
編集者Durga Misra, Stefan De Gendt, Michel Housa, Koji Kita, Dolf Landheer
出版社Electrochemical Society Inc.
ページ295-301
ページ数7
1
ISBN(電子版)9781607688181
ISBN(印刷版)9781623324704
DOI
出版ステータス出版済み - 2017
イベント15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting - National Harbor, 米国
継続期間: 10月 1 201710月 5 2017

出版物シリーズ

名前ECS Transactions
番号1
80
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

その他

その他15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting
国/地域米国
CityNational Harbor
Period10/1/1710/5/17

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)

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