First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN

K. Sekiguchi, H. Shirakawa, Y. Yamamoto, M. Araidai, Y. Kangawa, K. Kakimoto, K. Shiraishi

研究成果: Contribution to journalArticle査読

9 被引用数 (Scopus)

抄録

We analyzed the decomposition mechanisms of trimethylgallium (TMG) used for the gallium source of GaN fabrication based on first-principles calculations and thermodynamic analysis. We considered two conditions. One condition is under the total pressure of 1 atm and the other one is under metal organic vapor phase epitaxy (MOVPE) growth of GaN. Our calculated results show that H2 is indispensable for TMG decomposition under both conditions. In GaN MOVPE, TMG with H2 spontaneously decomposes into Ga(CH3) and Ga(CH3) decomposes into Ga atom gas when temperature is higher than 440 K. From these calculations, we confirmed that TMG surely becomes Ga atom gas near the GaN substrate surfaces.

本文言語英語
ページ(範囲)950-953
ページ数4
ジャーナルJournal of Crystal Growth
468
DOI
出版ステータス出版済み - 6 15 2017

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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