First principles approach to C aggregation process during 0th graphene growth on SiC(0001)

Masato Inoue, Hiroyuki Kageshima, Yoshihiro Kangawa, Koichi Kakimoto

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

The C clustering process during the 0th graphene growth on SiC(0001) was investigated by a first principles approach. It was found that the structure of C clusters is not purely-hexagonal but penta-heptagonal, including pentagons and heptagons. We also revealed that mono-ring clusters, the lowest-energy clusters in vacuum, are no longer the ground-state configuration on SiC(0001). This result suggests a template effect of SiC(0001) for the growth of graphene.

本文言語英語
ホスト出版物のタイトルPhysics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
出版社American Institute of Physics Inc.
ページ129-130
ページ数2
ISBN(印刷版)9780735411944
DOI
出版ステータス出版済み - 2013
イベント31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, スイス
継続期間: 7 29 20128 3 2012

出版物シリーズ

名前AIP Conference Proceedings
1566
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

その他

その他31st International Conference on the Physics of Semiconductors, ICPS 2012
国/地域スイス
CityZurich
Period7/29/128/3/12

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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