First-principles study of Si_34-xGe_x clathrates: Direct wide-gap semiconductors in Si-Ge alloys

Chemistry

• Clathrate 100%
• Alloy 71%
• Procedure 28%
• Atom 28%
• Band Gap 28%
• Pseudopotential 28%
• Energetics 28%
• Intravenous 14%
• Structure 14%
• Density 14%
• Electronic State 14%
• Group 14%
• Symmetry 14%
• Application 14%
• Electronic Band Structure 14%
• Semiconductor 14%
• Optoelectronics 14%
• Fd3m 14%
• Total Energy 14%
• Equation of State 14%
• Brillouin Zone 14%

Physics

• Clathrate 100%
• Alloy 71%
• Atoms 14%
• Differences 14%
• Semiconductor 14%
• Utilization 14%
• Symmetry 14%
• Equations of State 14%
• Gaps 14%
• First-Principles 14%
• Semiconductor Device 14%
• Lagrangian Points 14%
• Brillouin Zone 14%

Material Science

• Si-Ge Alloys 28%