Flexible organic field-effect transistors and complementary inverters based on a solution-processable quinoidal oligothiophene derivative

J. C. Ribierre, K. Takaishi, T. Muto, T. Aoyama

研究成果: Contribution to journalArticle査読

6 被引用数 (Scopus)

抄録

We report on the fabrication and characterization of ambipolar organic field-effect transistors based on the solution-processable quinoidal oligothiophene [QQT(CN)4] and using a new fluorinated polymer (AL-X601) with a dielectric constant of 3.1 as dielectric material layer. As-prepared devices show ambipolar transport with hole and electron field-effect mobilities of 6 × 10-2 and 5 × 10-3 cm2/V s respectively as well as an on and off state current ratio higher than 10 3. Influence of a thermal annealing on the device performances was investigated and was found to lead to a majority carrier type conversion from a p-type to an n-type dominant behavior. QQT(CN)4 based field-effect transistors and complementary inverters fabricated on flexible substrates and using Al-X601 as gate dielectric material show high performance and good mechanical stability.

本文言語英語
ページ(範囲)1415-1418
ページ数4
ジャーナルOptical Materials
33
9
DOI
出版ステータス出版済み - 7 2011

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • コンピュータ サイエンス(全般)
  • 原子分子物理学および光学
  • 分光学
  • 物理化学および理論化学
  • 有機化学
  • 無機化学
  • 電子工学および電気工学

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