Flexible organic field-effect transistors fabricated by the electrode-peeling transfer

Takeshi Yasuda, Katsuhiko Fujita, Tetsuo Tsutsui

研究成果: ジャーナルへの寄稿会議記事査読

抄録

We report a simple and mild fabrication of flexible organic field-effect transistors (OFETs) by an electrode-peeling transfer method. Firstly, fine patterns of source-drain metal electrodes were formed on a solid substrate, where a micro-patterning process such as photolithography is applicable. An organic dielectric layer (poly-chloro-p-xylylene) was deposited by a chemical vapor deposition. Then patterned gate electrode was deposited using a shadow mask. On the top surface of the gate electrode, another adhesive flexible substrate was fixed and the stack of the flexible substrate /gate electrode /dielectric layer /source-drain electrode was peeled away from the solid substrate. The peeling-transfer was completed with a help of a self-assembled monolayer of n-decyl mercaptan as a connecting buffer layer between the gold electrodes and the dielectric layer. Then an organic semiconductor material was deposited on the fresh peeled-off surface on the flexible substrate. When pentacene was used as the semiconductor material, the OFETs exhibited a hole mobility of 0.1 cm2/Vs and a current on/off ratio of 105.

本文言語英語
ページ(範囲)105-110
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
769
DOI
出版ステータス出版済み - 2003
イベントFlexible Electronics - Materials and Device Technology - San Francisco, CA, 米国
継続期間: 4月 22 20034月 25 2003

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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