Floating-gate enhanced current-amplification in bipolar action of SOI-MOSFET

Y. Uryu; T. Asano

doi:10.1049/el:20010881

Floating-gate enhanced current-amplification in bipolar action of SOI-MOSFET

Y. Uryu, T. Asano

日本エジプト科学技術連携センター

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

1 被引用数 (Scopus)

抄録

The operation of a silicon on insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) was investigated in the presence of an electrically floating gate. The floating gate enhanced the emitter injection efficiency by depleting the channel region of its majority carriers. The device technology was found to be compatible with complementary metal oxide semiconductor (CMOS) technology and hence the effect is useful in integration of image sensing devices on SOI technology.

本文言語	英語
ページ（範囲）	1313-1314
ページ数	2
ジャーナル	Electronics Letters
巻	37
号	21
DOI	https://doi.org/10.1049/el:20010881
出版ステータス	出版済み - 10月 11 2001

!!!All Science Journal Classification (ASJC) codes

電子工学および電気工学

文献へのアクセス

10.1049/el:20010881

他のファイルとリンク

引用スタイル

@article{dc091ea7cc4e4c25bf435be5b74a13ba,

title = "Floating-gate enhanced current-amplification in bipolar action of SOI-MOSFET",

abstract = "The operation of a silicon on insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) was investigated in the presence of an electrically floating gate. The floating gate enhanced the emitter injection efficiency by depleting the channel region of its majority carriers. The device technology was found to be compatible with complementary metal oxide semiconductor (CMOS) technology and hence the effect is useful in integration of image sensing devices on SOI technology.",

author = "Y. Uryu and T. Asano",

year = "2001",

month = oct,

day = "11",

doi = "10.1049/el:20010881",

language = "English",

volume = "37",

pages = "1313--1314",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "21",

}

TY - JOUR

T1 - Floating-gate enhanced current-amplification in bipolar action of SOI-MOSFET

AU - Uryu, Y.

AU - Asano, T.

PY - 2001/10/11

Y1 - 2001/10/11

N2 - The operation of a silicon on insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) was investigated in the presence of an electrically floating gate. The floating gate enhanced the emitter injection efficiency by depleting the channel region of its majority carriers. The device technology was found to be compatible with complementary metal oxide semiconductor (CMOS) technology and hence the effect is useful in integration of image sensing devices on SOI technology.

AB - The operation of a silicon on insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) was investigated in the presence of an electrically floating gate. The floating gate enhanced the emitter injection efficiency by depleting the channel region of its majority carriers. The device technology was found to be compatible with complementary metal oxide semiconductor (CMOS) technology and hence the effect is useful in integration of image sensing devices on SOI technology.

UR - http://www.scopus.com/inward/record.url?scp=0035846014&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035846014&partnerID=8YFLogxK

U2 - 10.1049/el:20010881

DO - 10.1049/el:20010881

M3 - Article

AN - SCOPUS:0035846014

VL - 37

SP - 1313

EP - 1314

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 21

ER -

Floating-gate enhanced current-amplification in bipolar action of SOI-MOSFET

抄録

!!!All Science Journal Classification (ASJC) codes

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル