Flow instability of the melt during Czochralski Si crystal growth: dependence on growth conditions; a numerical simulation study

Koichi Kakimoto, Masahito Watanabe, Minoru Eguchi, Taketoshi Hibiya

研究成果: Contribution to journalArticle査読

19 被引用数 (Scopus)

抄録

Flow instability of molten Si during Czochralski (CZ) Si crystal growth has been studied utilizing a 3D heat- and mass-transfer model together with global heat- and mass-transfer calculation. It is found that the phase transition from an axisymmetric to a non-axisymmetric mode of the flow occurs depending critically on the growth parameters, such as temperature distribution, crucible as well as crystal rotation rates. In order to prevent the non-axisymmetric instability, low crucible rotation and large temperature difference between the crucible and the crystal are found to be desired. These tendencies are well characterized by the thermal Rossby number and the Taylor number, which represent the relative strengths of Coriolis force to buoyancy force and inertial force. The calculated results are compared and discussed with the experimental observation obtained for the same growth condition.

本文言語英語
ページ(範囲)197-205
ページ数9
ジャーナルJournal of Crystal Growth
139
3-4
DOI
出版ステータス出版済み - 5 2 1994
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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