Flux pinning in amorphous MoSi films for abrikosov vortex memory

Shugo Kubo, Masashi Mukaida, Kazunori Miyahara

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

The use of superconducting films having low flux pinning density in a vortex storage region (VSR) of an Abrikosov vortex memory was assessed. Flux pinning densities in MoSi thin films were examined with particular attention to parallel field behavior. Pinning force densities in the perpendicular field decreased with decreasing film thickness. On the other hand these values for thinner films in the parallel field were one order of magnitude larger than those in the perpendicular field. This indicated the need for increasing the perpendicular conponent in the magnetic field generated by the write current line in order to enhance low write current operation. An improved cell structure was devised in which the write current line is located adjacent to the VSR. This arrangement proved to be effective in stable low current operation in a vortex memory.

本文言語英語
ホスト出版物のタイトルAdvances in Cryogenic Engineering
出版社Publ by Plenum Publ Corp
ページ789-796
ページ数8
ISBN(印刷版)0306428016
出版ステータス出版済み - 12 1 1988
外部発表はい
イベントProceedings of the Seventh International Cryogenic Materials Conference - ICMC - St. Charles, IL, USA
継続期間: 6 14 19876 18 1987

出版物シリーズ

名前Advances in Cryogenic Engineering
34
ISSN(印刷版)0065-2482

その他

その他Proceedings of the Seventh International Cryogenic Materials Conference - ICMC
CitySt. Charles, IL, USA
Period6/14/876/18/87

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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