A novel method of indirect deposition by means of a focused ion beam (FIB) is utilized to develop metal/insulator/semiconductor nanowire core-shell structures. This method is based upon depositing an annular pattern centered on a nanowire, with secondary deposition then coating the wire. Typical cross-sectional deposition area increments as a function of ion doses are 1.3 × 10-2 μm2 nC-1 for Pt and 3.5 × 10-2 μm2 nC-1 for SiO2. The structures are examined with a transmission electron microscope (TEM) using a new nanowire TEM sample preparation method that allows direct examinations of individually selected core-shell nanowires fabricated under different indirect FIB deposition conditions. Elemental analyses by means of energy dispersive x-ray spectroscopy and electron energy filtered TEM imaging verify the deposition of SiO2 and Pt layers. Relatively uniform Pt and SiO 2 coatings on individual GaP nanowires can be achieved with overall thickness deviation of about 10% for deposition up to 25-30 nm thick Pt or SiO2 shells. It should be possible to extend this approach to any nanowire/nanotube system, and to a wide range of coatings in any desired layer sequences.
|出版ステータス||出版済み - 11月 5 2008|
!!!All Science Journal Classification (ASJC) codes
- 化学 (全般)