Foreseeing and active-suppression of anomalous discharge in plasma processing equipment by in-situ monitoring of plasma state using viewing port probe

M. Yasaka, M. Takeshita, M. Tama, T. Kitamura, N. Ito, Y. Itagaki, F. Uesugi, K. Okamura, A. Kodama, R. Miyagawa, K. Ishimatsu, M. Hagiwara, T. Asano

研究成果: ジャーナルへの寄稿会議記事査読

1 被引用数 (Scopus)

抄録

We demonstrate for the first time the foreseeing and active suppression of anomalous discharge in a plasma processing equipment. The foreseeing of anomalous discharge is realized by monitoring plasma state using a newly developed viewing-port probe. We have found that a foreseeing signal indicating a slight change in plasma potential appears prior to the occurrence of the anomalous discharge. The time interval between the foreseeing signal and the occurrence of the abnormal discharge is several tens millisecond, which allows to build-up a electric system to control the plasma state. The active suppression of anomalous discharge is demonstrated using a reactive ion-etching system by controlling the applied voltage of electrostatic chuck of wafer stage.

本文言語英語
論文番号PC207
ページ(範囲)371-374
ページ数4
ジャーナルIEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
DOI
出版ステータス出版済み - 2005
イベントIEEE International Symposium on Semiconductor Manufacturing, Conference Proceedings - San Jose, CA, 米国
継続期間: 9月 13 20059月 15 2005

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 工学(全般)
  • 産業および生産工学
  • 電子工学および電気工学

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