Formalion of SiGe quasi-single crystal grain on insulator by indentation-induced solid-phase crystallization

T. Sadoh, K. Toko, M. Miyao

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抜粋

Formation of SiGe quasi-single crystal grains on insulator by the indentation-induced solid-phase crystallization has been investigated. The incubation time for nucleation was significantly reduced by the indentation. As a result, large (∼2 (.irn) crystal grains were realized at controlled positions for samples with all Ge fractions. This method is expected to be useful for realization of the 3D-ULSIs and system-in-displays.

元の言語英語
ホスト出版物のタイトルECS Transactions - SiGe, Ge, and Related Compounds 3
ホスト出版物のサブタイトルMaterials, Processing, and Devices
ページ219-222
ページ数4
エディション10
DOI
出版物ステータス出版済み - 12 1 2008
イベント3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, 米国
継続期間: 10 12 200810 17 2008

出版物シリーズ

名前ECS Transactions
番号10
16
ISSN(印刷物)1938-5862
ISSN(電子版)1938-6737

その他

その他3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
米国
Honolulu, HI
期間10/12/0810/17/08

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • これを引用

    Sadoh, T., Toko, K., & Miyao, M. (2008). Formalion of SiGe quasi-single crystal grain on insulator by indentation-induced solid-phase crystallization. : ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices (10 版, pp. 219-222). (ECS Transactions; 巻数 16, 番号 10). https://doi.org/10.1149/1.2986773