Formation and current-voltage characteristics of SiC/Si-dot/SiC resonant tunneling diodes

Yoshifumi Ikoma, T. Tada, K. Uchiyama, F. Watanabe, T. Motooka

研究成果: ジャーナルへの寄稿記事

10 引用 (Scopus)

抜粋

We have investigated the formation and the current-voltage characteristics of SiC/Si-dot/SiC resonant tunneling diodes on Si(100). The high-resolution transmission electron microscopy observation showed that SiC/Si-dot/SiC structures were epitaxially grown on Si(100) at the substrate temperatures of 800°C for SiC and 700°C for Si-dot growth. The current-voltage characteristics were measured by an atomic force microscope using a gold-coated conductive cantilever. Negative resistance regions were observed in the current-voltage curves from the dots. The numerical calculations showed that the negative resistance was due to the resonant tunneling of the electron wave through the double barrier structure.

元の言語英語
ページ(範囲)157-164
ページ数8
ジャーナルSolid State Phenomena
78-79
出版物ステータス出版済み - 2001

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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  • これを引用

    Ikoma, Y., Tada, T., Uchiyama, K., Watanabe, F., & Motooka, T. (2001). Formation and current-voltage characteristics of SiC/Si-dot/SiC resonant tunneling diodes. Solid State Phenomena, 78-79, 157-164.