Formation mechanism of Al-segregated region in InAlAs/(1 1 0)InP

Y. Kangawa, K. Wakizono, N. Kuwano, K. Oki, T. Ito

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

We studied the formation mechanism of Al-segregated regions in InAlAs/(1 1 0) InP by transmission electron microscopy (TEM). It is found that the Al-segregated regions observed as dark bands in the TEM image thread upward at certain intervals. The intervals of the regions agree well with the spaces estimated from the distances between one-monolayer steps (1-MLSs) on the substrate surface. This suggests that the 1-MLSs play an important role for nucleation of the Al-segregated region. Based on this finding, we also propose a model for the nucleation mechanism.

本文言語英語
ページ(範囲)164-168
ページ数5
ジャーナルJournal of Crystal Growth
229
1
DOI
出版ステータス出版済み - 7 2 2001
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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