We have studied the morphology of antiphase boundaries (APBs) and their formation mechanism in CuAu-I type ordered InGaAs grown on a vicinal (110)InP substrate. In InGaAs grown at 380°C, APBs are formed parallel to (110) by the flow of one-monolayer steps. In InGaAs grown at 450°C, the normal directions of APBs arc slightly tilted toward  or  from (110) and some APBs show a hairpin shape. New formation mechanisms of these APBs are proposed.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||出版済み - 1 1 1999|
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