Formation mechanism of antiphase boundary structure in molecular beam epitaxy grown InGaAs/(110)InP

Yoshihiro Kangawa, Chikako Kojima, Noriyuki Kuwano, Kensuke Oki

研究成果: Contribution to journalArticle査読

抄録

We have studied the morphology of antiphase boundaries (APBs) and their formation mechanism in CuAu-I type ordered InGaAs grown on a vicinal (110)InP substrate. In InGaAs grown at 380°C, APBs are formed parallel to (110) by the flow of one-monolayer steps. In InGaAs grown at 450°C, the normal directions of APBs arc slightly tilted toward [011] or [001] from (110) and some APBs show a hairpin shape. New formation mechanisms of these APBs are proposed.

本文言語英語
ページ(範囲)40-41
ページ数2
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38
1
DOI
出版ステータス出版済み - 1 1 1999

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Formation mechanism of antiphase boundary structure in molecular beam epitaxy grown InGaAs/(110)InP」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル