Formation mechanism of twin boundaries in silicon multicrystals during crystal growth

K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, K. Morishita, K. Nakajima

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Formation mechanism of twin boundaries in silicon multicrystals during crystal growth was investigated by using in-situ observation of the growth interface and following characterization of microstructures of the grown crystal. The crystal growth experiments were performed under two different conditions, which are constant cooling rate and intentionally changed crystal growth rate. Under both the conditions, twin boundaries were more frequently formed when the growth rate drastically increased than when the growth rate was constant in high value. Based on these new findings, formation mechanism of twin boundaries are discussed in terms of formation energy.

本文言語英語
ホスト出版物のタイトルProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
ページ810-811
ページ数2
DOI
出版ステータス出版済み - 12 20 2010
外部発表はい
イベント35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, 米国
継続期間: 6 20 20106 25 2010

出版物シリーズ

名前Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(印刷版)0160-8371

その他

その他35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country米国
CityHonolulu, HI
Period6/20/106/25/10

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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