Formation of β-FeSi2 by ion implantation of 90 keV Fe 10+ ions on N-type silicon

P. V. Rajesh, S. P. Pati, J. B.M. Krishna, B. Ghosh, D. Das

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 被引用数 (Scopus)

抄録

The semiconducting disilicide of the Fe-Si binary system β-FeSi 2 has been synthesized by the Ion Beam Synthesis (IBS) technique. High purity n-type float zone silicon wafers have been irradiated at various fluences from 5×1015 to 1×1017 by Fe 10+ beam at 90 keV using a ECR based low energy ion beam implanter. The irradiated samples were annealed in pure argon ambient at 900°C for 1 hour. GIXRD measurements were done at 0.5 degree incidence on the irradiated samples and the beta phase was identified. Raman measurements confirm the existence of β-FeSi2. In addition to the semiconducting β-FeSi2 phase, the sample irradiated with the highest dose contains the metallic alpha phase. The transition from beta to alpha phase observed in the sample that is annealed at relatively lower temperature has been assigned to the presence of lattice defects.

本文言語英語
ホスト出版物のタイトルSolid State Physics - Proceedings of the 56th DAE Solid State Physics Symposium 2011
ページ1051-1052
ページ数2
1
DOI
出版ステータス出版済み - 2012
イベント56th DAE Solid State Physics Symposium 2011 - Kattankulathur, Tamilnadu, インド
継続期間: 12 19 201112 23 2011

出版物シリーズ

名前AIP Conference Proceedings
番号1
1447
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

その他

その他56th DAE Solid State Physics Symposium 2011
国/地域インド
CityKattankulathur, Tamilnadu
Period12/19/1112/23/11

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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