Formation of Al2O3 - HfO2 eutectic EBC film on silicon carbide substrate

Kyosuke Seya, Shunkichi Ueno, Byung Koog Jang

研究成果: ジャーナルへの寄稿評論記事

抄録

The formation mechanism of Al2O3 - HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3 - HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC- HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3 - HfO2 eutectic structure grows from the top of the intermediate layer.

元の言語英語
記事番号318278
ジャーナルJournal of Nanomaterials
2015
DOI
出版物ステータス出版済み - 1 1 2015

Fingerprint

Silicon carbide
Eutectics
Carbon
Substrates
Molten materials
Zone melting
Silicon
Anchors
Chemical analysis
Solidification
Adhesion
Vapors
silicon carbide
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

これを引用

Formation of Al2O3 - HfO2 eutectic EBC film on silicon carbide substrate. / Seya, Kyosuke; Ueno, Shunkichi; Jang, Byung Koog.

:: Journal of Nanomaterials, 巻 2015, 318278, 01.01.2015.

研究成果: ジャーナルへの寄稿評論記事

@article{61fde5e5c23442868142d82a44391a2b,
title = "Formation of Al2O3 - HfO2 eutectic EBC film on silicon carbide substrate",
abstract = "The formation mechanism of Al2O3 - HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3 - HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC- HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3 - HfO2 eutectic structure grows from the top of the intermediate layer.",
author = "Kyosuke Seya and Shunkichi Ueno and Jang, {Byung Koog}",
year = "2015",
month = "1",
day = "1",
doi = "10.1155/2015/318278",
language = "English",
volume = "2015",
journal = "Journal of Nanomaterials",
issn = "1687-4110",
publisher = "Hindawi Publishing Corporation",

}

TY - JOUR

T1 - Formation of Al2O3 - HfO2 eutectic EBC film on silicon carbide substrate

AU - Seya, Kyosuke

AU - Ueno, Shunkichi

AU - Jang, Byung Koog

PY - 2015/1/1

Y1 - 2015/1/1

N2 - The formation mechanism of Al2O3 - HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3 - HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC- HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3 - HfO2 eutectic structure grows from the top of the intermediate layer.

AB - The formation mechanism of Al2O3 - HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3 - HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC- HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3 - HfO2 eutectic structure grows from the top of the intermediate layer.

UR - http://www.scopus.com/inward/record.url?scp=84940767684&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84940767684&partnerID=8YFLogxK

U2 - 10.1155/2015/318278

DO - 10.1155/2015/318278

M3 - Review article

AN - SCOPUS:84940767684

VL - 2015

JO - Journal of Nanomaterials

JF - Journal of Nanomaterials

SN - 1687-4110

M1 - 318278

ER -