Formation of epitaxial 3C-SiC layers by microwave plasma-assisted carbonization

Yoshimine Kato, Masaki Goto, Ryota Sato, Kazuhiro Yamada, Akira Koga, Kungen Tsutsui, Chenda Srey, Tanaka Satoru

研究成果: ジャーナルへの寄稿記事

8 引用 (Scopus)

抄録

Epitaxial 3C-SiC (β-SiC) thin layers are grown on Si (001) substrates by carbonization in moderate-pressure microwave plasmas, typically used for diamond film deposition. The substrate temperature and the CH4 gas concentration diluted in H2 gas are varied from 1000 to 1200°C and from 2 to 8vol.%, respectively. The grown layers are characterized by scanning electron microscopy, Raman spectroscopy, x-ray diffraction, Fourier transform infrared spectroscopy, reflection high energy electron diffraction, and energy-dispersive x-ray spectroscopy. For 2% CH4, epitaxial 3C-SiC about 10nm thick is grown only when the temperature is increased to 1200°C, while polycrystalline 3C-SiC is grown for temperatures less than 1200°C. For 8% CH4, epitaxial 3C-SiC is grown even for temperatures less than 1200°C, but the thickness of the SiC layer is reduced. Some amounts of amorphous carbon and diamond phases are found to grow on the SiC layers.

元の言語英語
ページ(範囲)990-993
ページ数4
ジャーナルSurface and Coatings Technology
206
発行部数5
DOI
出版物ステータス出版済み - 11 25 2011

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carbonization
Carbonization
Microwaves
Plasmas
microwaves
Gases
X rays
Temperature
Diamond
Reflection high energy electron diffraction
temperature
Diamond films
Amorphous carbon
Substrates
diamond films
gases
high energy electrons
x ray spectroscopy
Fourier transform infrared spectroscopy
Raman spectroscopy

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

これを引用

Formation of epitaxial 3C-SiC layers by microwave plasma-assisted carbonization. / Kato, Yoshimine; Goto, Masaki; Sato, Ryota; Yamada, Kazuhiro; Koga, Akira; Tsutsui, Kungen; Srey, Chenda; Satoru, Tanaka.

:: Surface and Coatings Technology, 巻 206, 番号 5, 25.11.2011, p. 990-993.

研究成果: ジャーナルへの寄稿記事

Kato, Yoshimine ; Goto, Masaki ; Sato, Ryota ; Yamada, Kazuhiro ; Koga, Akira ; Tsutsui, Kungen ; Srey, Chenda ; Satoru, Tanaka. / Formation of epitaxial 3C-SiC layers by microwave plasma-assisted carbonization. :: Surface and Coatings Technology. 2011 ; 巻 206, 番号 5. pp. 990-993.
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abstract = "Epitaxial 3C-SiC (β-SiC) thin layers are grown on Si (001) substrates by carbonization in moderate-pressure microwave plasmas, typically used for diamond film deposition. The substrate temperature and the CH4 gas concentration diluted in H2 gas are varied from 1000 to 1200°C and from 2 to 8vol.{\%}, respectively. The grown layers are characterized by scanning electron microscopy, Raman spectroscopy, x-ray diffraction, Fourier transform infrared spectroscopy, reflection high energy electron diffraction, and energy-dispersive x-ray spectroscopy. For 2{\%} CH4, epitaxial 3C-SiC about 10nm thick is grown only when the temperature is increased to 1200°C, while polycrystalline 3C-SiC is grown for temperatures less than 1200°C. For 8{\%} CH4, epitaxial 3C-SiC is grown even for temperatures less than 1200°C, but the thickness of the SiC layer is reduced. Some amounts of amorphous carbon and diamond phases are found to grow on the SiC layers.",
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AU - Kato, Yoshimine

AU - Goto, Masaki

AU - Sato, Ryota

AU - Yamada, Kazuhiro

AU - Koga, Akira

AU - Tsutsui, Kungen

AU - Srey, Chenda

AU - Satoru, Tanaka

PY - 2011/11/25

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N2 - Epitaxial 3C-SiC (β-SiC) thin layers are grown on Si (001) substrates by carbonization in moderate-pressure microwave plasmas, typically used for diamond film deposition. The substrate temperature and the CH4 gas concentration diluted in H2 gas are varied from 1000 to 1200°C and from 2 to 8vol.%, respectively. The grown layers are characterized by scanning electron microscopy, Raman spectroscopy, x-ray diffraction, Fourier transform infrared spectroscopy, reflection high energy electron diffraction, and energy-dispersive x-ray spectroscopy. For 2% CH4, epitaxial 3C-SiC about 10nm thick is grown only when the temperature is increased to 1200°C, while polycrystalline 3C-SiC is grown for temperatures less than 1200°C. For 8% CH4, epitaxial 3C-SiC is grown even for temperatures less than 1200°C, but the thickness of the SiC layer is reduced. Some amounts of amorphous carbon and diamond phases are found to grow on the SiC layers.

AB - Epitaxial 3C-SiC (β-SiC) thin layers are grown on Si (001) substrates by carbonization in moderate-pressure microwave plasmas, typically used for diamond film deposition. The substrate temperature and the CH4 gas concentration diluted in H2 gas are varied from 1000 to 1200°C and from 2 to 8vol.%, respectively. The grown layers are characterized by scanning electron microscopy, Raman spectroscopy, x-ray diffraction, Fourier transform infrared spectroscopy, reflection high energy electron diffraction, and energy-dispersive x-ray spectroscopy. For 2% CH4, epitaxial 3C-SiC about 10nm thick is grown only when the temperature is increased to 1200°C, while polycrystalline 3C-SiC is grown for temperatures less than 1200°C. For 8% CH4, epitaxial 3C-SiC is grown even for temperatures less than 1200°C, but the thickness of the SiC layer is reduced. Some amounts of amorphous carbon and diamond phases are found to grow on the SiC layers.

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