Formation of epitaxial 3C-SiC layers by microwave plasma-assisted carbonization

Yoshimine Kato, Masaki Goto, Ryota Sato, Kazuhiro Yamada, Akira Koga, Kungen Teii, Chenda Srey, Satoru Tanaka

研究成果: Contribution to journalArticle査読

8 被引用数 (Scopus)


Epitaxial 3C-SiC (β-SiC) thin layers are grown on Si (001) substrates by carbonization in moderate-pressure microwave plasmas, typically used for diamond film deposition. The substrate temperature and the CH4 gas concentration diluted in H2 gas are varied from 1000 to 1200°C and from 2 to 8vol.%, respectively. The grown layers are characterized by scanning electron microscopy, Raman spectroscopy, x-ray diffraction, Fourier transform infrared spectroscopy, reflection high energy electron diffraction, and energy-dispersive x-ray spectroscopy. For 2% CH4, epitaxial 3C-SiC about 10nm thick is grown only when the temperature is increased to 1200°C, while polycrystalline 3C-SiC is grown for temperatures less than 1200°C. For 8% CH4, epitaxial 3C-SiC is grown even for temperatures less than 1200°C, but the thickness of the SiC layer is reduced. Some amounts of amorphous carbon and diamond phases are found to grow on the SiC layers.

ジャーナルSurface and Coatings Technology
出版ステータス出版済み - 11 25 2011

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学


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