Formation of epitaxial 3C-SiC layers by microwave plasma-assisted carbonization

Yoshimine Kato, Masaki Goto, Ryota Sato, Kazuhiro Yamada, Akira Koga, Kungen Tsutsui, Chenda Srey, Tanaka Satoru

研究成果: ジャーナルへの寄稿記事

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Epitaxial 3C-SiC (β-SiC) thin layers are grown on Si (001) substrates by carbonization in moderate-pressure microwave plasmas, typically used for diamond film deposition. The substrate temperature and the CH4 gas concentration diluted in H2 gas are varied from 1000 to 1200°C and from 2 to 8vol.%, respectively. The grown layers are characterized by scanning electron microscopy, Raman spectroscopy, x-ray diffraction, Fourier transform infrared spectroscopy, reflection high energy electron diffraction, and energy-dispersive x-ray spectroscopy. For 2% CH4, epitaxial 3C-SiC about 10nm thick is grown only when the temperature is increased to 1200°C, while polycrystalline 3C-SiC is grown for temperatures less than 1200°C. For 8% CH4, epitaxial 3C-SiC is grown even for temperatures less than 1200°C, but the thickness of the SiC layer is reduced. Some amounts of amorphous carbon and diamond phases are found to grow on the SiC layers.

元の言語英語
ページ(範囲)990-993
ページ数4
ジャーナルSurface and Coatings Technology
206
発行部数5
DOI
出版物ステータス出版済み - 11 25 2011

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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