Formation of GaAs-on-insulator structures on Si substrates by heteroepitaxial growth of CaF2 and GaAs

Tanemasa Asano, Hiroshi Ishiwara, Hee Chul Lee, Kazuo Tsutsui, Seijiro Furukawa

研究成果: ジャーナルへの寄稿記事

30 引用 (Scopus)

抄録

Epitaxial GaAs layers have been grown on (100) and (111) oriented CaF2/Si structures by molecular beam epitaxy, and characterized mainly by ion channeling and cross-sectional transmission electron microscopy. GaAs films were found to grow epitaxially at conventional growth temperatures (≤600°C). GaAs films having better crystalline quality could be grown on (111) substrates, though the surface of these GaAs films was not flat. Planar defects were peculiarly observed in GaAs films grown on (100) substrates.

元の言語英語
ページ(範囲)L139-L141
ジャーナルJapanese Journal of Applied Physics
25
発行部数2 A
DOI
出版物ステータス出版済み - 2 1986

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Epitaxial growth
insulators
Substrates
Epitaxial layers
Growth temperature
Molecular beam epitaxy
molecular beam epitaxy
Crystalline materials
Transmission electron microscopy
Defects
transmission electron microscopy
defects
Ions
ions
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Formation of GaAs-on-insulator structures on Si substrates by heteroepitaxial growth of CaF2 and GaAs. / Asano, Tanemasa; Ishiwara, Hiroshi; Lee, Hee Chul; Tsutsui, Kazuo; Furukawa, Seijiro.

:: Japanese Journal of Applied Physics, 巻 25, 番号 2 A, 02.1986, p. L139-L141.

研究成果: ジャーナルへの寄稿記事

Asano, Tanemasa ; Ishiwara, Hiroshi ; Lee, Hee Chul ; Tsutsui, Kazuo ; Furukawa, Seijiro. / Formation of GaAs-on-insulator structures on Si substrates by heteroepitaxial growth of CaF2 and GaAs. :: Japanese Journal of Applied Physics. 1986 ; 巻 25, 番号 2 A. pp. L139-L141.
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