Formation of GaAs-on-insulator structures on Si substrates by heteroepitaxial growth of CaF2 and GaAs

Tanemasa Asano, Hiroshi Ishiwara, Hee Chul Lee, Kazuo Tsutsui, Seijiro Furukawa

研究成果: Contribution to journalArticle査読

31 被引用数 (Scopus)

抄録

Epitaxial GaAs layers have been grown on (100) and (111) oriented CaF2/Si structures by molecular beam epitaxy, and characterized mainly by ion channeling and cross-sectional transmission electron microscopy. GaAs films were found to grow epitaxially at conventional growth temperatures (≤600°C). GaAs films having better crystalline quality could be grown on (111) substrates, though the surface of these GaAs films was not flat. Planar defects were peculiarly observed in GaAs films grown on (100) substrates.

本文言語英語
ページ(範囲)L139-L141
ジャーナルJapanese Journal of Applied Physics
25
2 A
DOI
出版ステータス出版済み - 2 1986
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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「Formation of GaAs-on-insulator structures on Si substrates by heteroepitaxial growth of CaF<sub>2</sub> and GaAs」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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