FORMATION OF GaAs-SOI ON Si SUBSTRATES BY USE OF FLUORIDE INSULATORS.

Tanemasa Asano, Hiroshi Ishiwara, Hee Chul Lee, Kazuo Tsutsui, Seijiro Furukawa

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2 被引用数 (Scopus)

抄録

Epitaxial GaAs layers have been grown on composite CaF//2/Si structures by molecular beam epitaxy. Fundamental growth characteristics of GaAs films on (100) and (111) oriented substrates have been investigated. GaAs films were found to grow epitaxially at conventional growth temperatures (600 degree C). Epitaxial growth of GaAs on (100) substrates was observed at lower temperatures than the growth on (111) substrates. But the crystalline quality of GaAs films grown on (111) substrates was superior to that of the films grown on (100) substrates. GaAs films which had the quality comparable with a bulk GaAs crystal, as measured by ion channeling, were obtained on (111) substrates, though the surface morphology of the films was not satisfactory.

本文言語英語
ホスト出版物のタイトルConference on Solid State Devices and Materials
出版社Japan Soc of Applied Physics
ページ217-220
ページ数4
ISBN(印刷版)4930813107
出版ステータス出版済み - 12 1 1985
外部発表はい

出版物シリーズ

名前Conference on Solid State Devices and Materials

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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