Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation

Kouta Takahashi, Masashi Kurosawa, Hiroshi Ikenoue, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima

研究成果: 著書/レポートタイプへの貢献会議での発言

抜粋

We examined the formation of pn-junction didoes on Ge(100), Ge(110), and Ge(111) substrates by P-doping with immersion laser irradiation in phosphoric acid solution at RT. We achieved high-concentration phosphorus doping in all orientation, and the maximum concentrations of electrically activated P of 2.4×1019, 5.1×1019, and 9.8×1019 cm-3 for the Ge(100), Ge(110), and Ge(111) substrates, respectively, are obtained with 1000-times laser shots. On the other hand, the diffusion depth is significantly different with the orientation, which concerned with the melt depth.

元の言語英語
ホスト出版物のタイトル15th International Workshop on Junction Technology, IWJT 2015
出版者Institute of Electrical and Electronics Engineers Inc.
ページ8-10
ページ数3
ISBN(電子版)9784863485174
DOI
出版物ステータス出版済み - 5 9 2016
イベント15th International Workshop on Junction Technology, IWJT 2015 - Kyoto, 日本
継続期間: 6 11 20156 12 2015

出版物シリーズ

名前15th International Workshop on Junction Technology, IWJT 2015

その他

その他15th International Workshop on Junction Technology, IWJT 2015
日本
Kyoto
期間6/11/156/12/15

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

これを引用

Takahashi, K., Kurosawa, M., Ikenoue, H., Sakashita, M., Takeuchi, W., Nakatsuka, O., & Zaima, S. (2016). Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation. : 15th International Workshop on Junction Technology, IWJT 2015 (pp. 8-10). [7467063] (15th International Workshop on Junction Technology, IWJT 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWJT.2015.7467063